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Wafer cutting method

A silicon wafer cutting, zero-cutting technology, applied in manufacturing tools, stone processing equipment, work accessories, etc., can solve the problem of cutting time-consuming

Active Publication Date: 2019-11-29
阜宁协鑫光伏科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Based on this, it is necessary to provide a method for cutting silicon wafers for the time-consuming problem of cutting with diamond wire.

Method used

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  • Wafer cutting method

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Embodiment

[0037] The silicon block has a length of 156 mm and a cross-sectional dimension of 156×156 mm. The diameter of the diamond wire in the wire mesh is 10 mm, and the aspect ratio of the diamond particles in the diamond wire is 1, and the tensile strength is 4000 N / mm2.

[0038] During the cutting process from zero cutting depth to cutting depth of 130 mm, the pay-off wheel puts out a new wire for 2 kilometers, and the wire speed of diamond wire cutting is 25 m / s. During the process from the cutting depth of 130 mm to the cutting depth of 156 mm, the wire is routed in reverse, and the old wire after cutting is used for cutting, and the wire speed is 8 m / s. During the whole cutting process, the average line speed is 18 m / s, and the total cutting time is 6 hours.

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Abstract

The invention relates to a cutting method for silicon wafers. The method comprises the steps that cutting preparation is made, specifically, a crystal support bonded with a silicon block is arranged above a wire net, wherein the length of the silicon block is 156mm; and cutting is performed, specifically, the silicon block is pressed downwards, a paying-off wheel performs paying-off, a guide wheel drives a diamond wire to move so as to cut the silicon block, the diameter of the diamond wire is 8-12 microns, the tensile strength is not lower than 3800N / mm2, the length-diameter ratio of diamond particles in the diamond wire is 1-2, after the paying-off wheel performs paying-off for 2 kilometers and reaches from the cutting depth of zero to the cutting depth of 130 millimeters, reverse wiring is carried out, and the rest silicon block of 26mm is ground and cut through the cut diamond wire. According to the method, a cutting wire selects the diamond wire with specific specification which has the good sharpness and strength, a new wire is used for cutting in the early stage of cutting all the time so that cutting can be carried out at a high wire speed, the time for high-speed cutting by utilizing the new wire can be long, an old wire is used for reverse grinding and cutting in the knife outlet stage, the cutting wire speed of the old wire can be improved, and therefore the overall cutting efficiency can be improved, and the working time can be shortened.

Description

technical field [0001] The invention relates to the field of silicon wafer cutting, in particular to a silicon wafer cutting method. Background technique [0002] At present, the supply of silicon wafer products in the market is in short supply, and improving cutting efficiency has become the key direction. However, the process time accounts for 80% of the overall efficiency. According to the 80 / 20 principle, the primary problem is to reduce the process cutting time. Contents of the invention [0003] Based on this, it is necessary to provide a method for cutting silicon wafers to solve the time-consuming problem of using diamond wires. [0004] A method for cutting silicon wafers, comprising the steps of: [0005] Cutting preparation: install the crystal holder bonded with the silicon block on the wire net, the depth of the silicon block to be cut is 156 mm; [0006] Cutting: Press down the silicon block, pay off the wire, and the guide wheel drives the diamond wire to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04B28D7/00B28D7/04
CPCB28D5/0058B28D5/0082B28D5/045
Inventor 孙守振
Owner 阜宁协鑫光伏科技有限公司