Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Magnetic film deposition chamber and film deposition equipment

A magnetic thin film and deposition chamber technology, applied in the field of microelectronics, can solve the problems of not having induced magnetic thin film anisotropy, unable to apply magnetic thin film production equipment, etc., and achieve the effect of realizing in-plane anisotropy

Active Publication Date: 2019-11-29
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the existing magnetic field-induced deposition methods cannot be applied to production equipment for preparing magnetic thin films, such as PVD equipment
That is to say, the existing film deposition chamber does not have the function of inducing the in-plane anisotropy of the magnetic film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Magnetic film deposition chamber and film deposition equipment
  • Magnetic film deposition chamber and film deposition equipment
  • Magnetic film deposition chamber and film deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] In order to enable those skilled in the art to better understand the technical solution of the present invention, the magnetic film deposition chamber and film deposition equipment provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0046] Please also refer to Figure 1A ~ Figure 1C , the magnetic thin film deposition chamber includes a chamber main body 1 and a shielding assembly, wherein a target 3 is arranged on the top of the chamber main body 1, and in the chamber main body 1 and below the target material 3, a The base 2, the base 2 includes a bearing surface 22 for carrying the workpiece 7 to be processed, the bearing surface 22 is defined to place the workpiece 7 to be processed at a designated position on the base 2, and its shape and size are the same as those of the base 2 The workpiece 7 to be processed has the same shape and size. The above-mentioned shielding assembly includes an upper shieldin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A magnetic thin film deposition chamber, comprising a chamber main body (1). A base (2) is provided in the chamber main body (1). The base (2) comprises a bearing surface (22) used for bearing a workpiece to be processed (7). The magnetic thin film deposition chamber also comprises a bias magnetic field unit. The bias magnetic field unit comprises a first magnet set (8). The first magnet set (8) is disposed below the bearing surface (22) and used for forming a first magnetic field parallel to the bearing surface (22) above the base (2). The first magnetic field is used for enabling a magnetic thin film deposited on the workpiece to be processed (7) to have in-plane anisotropy. Also provided is a thin film deposition device.

Description

technical field [0001] The present invention relates to the technical field of microelectronics, in particular to a magnetic thin film deposition chamber and thin film deposition equipment. Background technique [0002] With the development of technology, the integrated circuit manufacturing process can significantly reduce the size of the processor, but there are still some core components such as integrated inductors and noise suppressors that face many difficulties in high frequency, miniaturization, and integration. . In order to solve this problem, soft magnetic thin film materials with high magnetization, high magnetic permeability, high resonance frequency and high resistivity have attracted more and more attention. [0003] Although soft magnetic thin film materials mainly consider its high magnetic permeability and high magnetization strength, as well as low coercive force and low loss, a major factor affecting the development of soft magnetic thin film materials i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35H01F41/18
CPCC23C14/351H01F41/18
Inventor 杨玉杰张同文马新艳郑金果王宽冒郭浩贾强
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products