Method for preparing hollow structure tungsten oxide nano-wires through graphene oxide in-situ growth method

A nano-tungsten oxide, in-situ growth technology, applied in the field of nano-materials, can solve the problems of high conditions and high energy consumption, achieve high purity, simple process, and improve the effect of nano-scale uniformity

Active Publication Date: 2017-11-21
AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These preparation methods have high conditions and high energy consumption, which is contrary to the development of low power consumption. Therefore, a method for preparing hollow structure nano tungsten oxide wires with controllable scale and high purity is developed, which is simple to operate, low in cost, and has high purity. more important and urgent

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  • Method for preparing hollow structure tungsten oxide nano-wires through graphene oxide in-situ growth method
  • Method for preparing hollow structure tungsten oxide nano-wires through graphene oxide in-situ growth method
  • Method for preparing hollow structure tungsten oxide nano-wires through graphene oxide in-situ growth method

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Embodiment 1

[0027] The present invention provides a method for preparing hollow structure nano tungsten oxide wire by in-situ growth of graphene oxide. The method includes the steps of adding a certain amount of graphite powder to concentrated H2SO4 (12mL), K2S2O8 (2.5g) and P2O5 (2.5g). In the solution composed of ), react at 80°C for 4.5 hours. Then it was cooled to room temperature and 0.5 L of deionized water was added. And dry at room temperature. Add this pre-oxidized graphite powder to 150mL of concentrated H2SO4, keep the environment at 0°C with an ice water bath, gradually add 15g KMnO4, and keep the temperature not exceeding 20°C, and stir at 35°C for 2 hours after the addition. Then 250 mL of deionized water was added and stirred for 2 hours. Then add 0.7 L of deionized water, then add 30 mL of 30% H2O2, dry at room temperature, and then dialyze in a dialysis bag for 1 week to remove impurities. Finally, after vacuum filtration and drying at room temperature, graphene oxide i...

Embodiment 2

[0033] On the basis of the above example, the steps of this example are: adding a certain amount of graphite powder to a solution consisting of concentrated H2SO4 (12mL), K2S2O8 (2.5g) and P2O5 (2.5g), and reacting at 80°C for 4.5 hour. Then it was cooled to room temperature and 0.5 L of deionized water was added. And dry at room temperature. Add this pre-oxidized graphite powder to 150mL of concentrated H2SO4, keep the environment at 0°C with an ice water bath, gradually add 15g KMnO4, and keep the temperature not exceeding 20°C, and stir at 35°C for 2 hours after the addition. Then 250 mL of deionized water was added and stirred for 2 hours. Then add 0.7 L of deionized water, then add 30 mL of 30% H2O2, dry at room temperature, and then dialyze in a dialysis bag for 1 week to remove impurities. Finally, after vacuum filtration and drying at room temperature, graphene oxide is obtained.

[0034] Weigh 2g of graphene oxide, add 1000g of absolute ethanol, stir and mix evenly, ...

Embodiment 3

[0036] On the basis of the above example, the steps of this example are: adding a certain amount of graphite powder to a solution consisting of concentrated H2SO4 (12mL), K2S2O8 (2.5g) and P2O5 (2.5g), and reacting at 80°C for 4.5 hour. Then it was cooled to room temperature and 0.5 L of deionized water was added. And dry at room temperature. Add this pre-oxidized graphite powder to 150mL of concentrated H2SO4, keep the environment at 0°C with an ice water bath, gradually add 15g KMnO4, and keep the temperature not exceeding 20°C, and stir at 35°C for 2 hours after the addition. Then 250 mL of deionized water was added and stirred for 2 hours. Then add 0.7 L of deionized water, then add 30 mL of 30% H2O2, dry at room temperature, and then dialyze in a dialysis bag for 1 week to remove impurities. Finally, after vacuum filtration and drying at room temperature, graphene oxide is obtained.

[0037] Weigh 3g of graphene oxide, add 1000g of absolute ethanol, stir and mix evenly, ...

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Abstract

The present invention discloses a method for preparing hollow structure tungsten oxide nano-wires through a graphene oxide in-situ growth method. The method comprises: 1) weighing a certain amount of graphene oxide and a tungsten-containing precursor compound; 2) dispersing in a certain amount of deionized water, and carrying out ultrasonic dispersing; 3) dissolving the weighed tungsten-containing precursor compound in the graphene oxide aqueous solution prepared in the step 2) to obtain graphene oxide and tungsten-containing precursor compound powder, placing into an oven, carrying out thermal insulation for a certain time at a certain temperature to obtain dried mixed powder; and 4) placing the dried graphene oxide and tungsten-containing precursor compound powder obtained in the step 3) in an alumina crucible, and naturally cooling to a room temperature in a H2 atmosphere so as to obtain the hollow structure tungsten oxide nano-wires. Compared to the conventional preparation method using the high-pressure reactor with the polytetrafluoroethylene inner lining, the preparation method of the present invention has advantages of lower energy consumption, lower cost, less investment in industrial production, low product cost, and convenient achievement of the mass production.

Description

Technical field [0001] The invention belongs to the field of nano materials, and particularly relates to a preparation method of hollow structure nano tungsten oxide wire prepared by graphene oxide in-situ growth method. Background technique [0002] In recent years, the rapid development of my country’s industry, the emission of industrial waste gas has made safety issues increasingly prominent, and the threat of PM2.5 to people’s health has also been paid more The sensitive performance of the nano sensor to detect polluted gases also puts forward higher requirements. Compared with traditional oxide materials, the specific surface area of ​​tungsten oxide nanowires is larger. 2 The gas detection has good selectivity and sensitivity. Its sensitive mechanism belongs to the surface resistance control type. The detection of nitrogen dioxide gas is based on the adsorption of oxygen in the air and the detected nitrogen dioxide gas on the surface of the semiconductor metal oxide and th...

Claims

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Application Information

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IPC IPC(8): C01G41/02B82Y40/00B01D53/02
CPCB01D53/02B82Y40/00C01G41/02C01P2002/72C01P2004/03C01P2004/04C01P2004/16C01P2004/64
Inventor 田浩亮高俊国汤智慧王长亮郭孟秋崔永静张欢欢周子民
Owner AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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