Method and system for laser processing wafer

Abstract

The invention provides a method and system processing a wafer by adopting laser. The method for processing the wafer by adopting the laser comprises the steps that the thickness information of a Low-K layer on the upper surface of the wafer is acquired; and phase-control type liquid crystal on silicon is controlled to modulate a laser beam according to the thickness information to enable the laser beam to etch the Low-K layer on the upper surface of the wafer. According to the method and system for processing the wafer by adopting the laser, by detecting the thickness of the Low-K layer on the upper surface of the wafer in real time and acquiring the thickness information, then by modulating the laser beam according to the thickness information through the phase-control type liquid crystal on silicon, processing of the Low-K layer on the upper surface of the wafer is achieved through accurate control over the laser beam, and a customized-shaped groove structure is obtained, and moreover, the working efficiency of wafer processing by adopting the laser, the laser processing precision and the uniformity of the separated wafer are enhanced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method and system for laser processing wafers. Background technique [0002] In recent years, with the continuous reduction of the feature size of semiconductor devices and the continuous improvement of chip integration, the parasitic capacitance between metal interconnections and multilayer wiring and the resistance of metal wires have increased sharply, resulting in RC delays, A series of problems such as increased power consumption limit the development of high-speed electronic components. When the feature size of the device is smaller than 90nm, the wafer must use low dielectric constant material instead of traditional SiO 2 Layer (K ​​= 3.9 ~ 4.2), commonly used Low-K materials include Dow Corning's FOx and porous SiLK materials, Applied Materials' black diamond series low-K thin film materials, Novellus System's CORAL, Intel's CDO and NEC's FCN+ organic layers an...

AI Technical Summary

Problems solved by technology

[0004] However, when the plate-shaped workpiece of the semiconductor wafer has a wavy surface and is not uniform in thickness, or when the wafer processing position is slightly displaced, a failure layer of a predetermined depth cannot be uniformly formed due to the refractive index when the laser beam is applied, and the The target position of the wafer is precisely cut and the groove structure can be customized, which affects the processing yield of the wafer

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