Circuit of repairing memory and storage chip

Abstract

The invention provides a circuit of repairing a memory and a storage chip. The circuit of repairing the memory includes: a memory built-in self-repair (Mbisr) module, which is connected with the memory and used for determining fault information when a fault of the memory occurs; an electrically programmable fuse (efuse) module, which is used for storing the fault information; and a conversion circuit, which is disposed between the Mbisr module and the efuse module and respectively connected with an interface of the Mbisr module and an interface of the efuse module. The conversion circuit is used for converting a reading operation signal or a writing operation signal of the Mbisr module on the efuse module into a signal, which can be identified by the efuse module, when the interface of the Mbisr module and the interface of the efuse module are different time sequence interfaces. Signals which can be identified by the efuse module include a writing enabling signal of the efuse module, a reading enabling signal of the efuse module, an address validity signal and a data input signal.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a circuit and a memory chip for repairing a memory. Background technique [0002] The minimum process precision of existing chip production is getting higher and higher, and the demand for memory repair functions is also increasing. [0003] The memory built-in self-repair module (Memory built-in self-repair, Mbisr module) is a module built in on the chip for repairing the memory, and the Mbisr module is outside the memory. During the memory development process, the Mbisr module tests the memory, and if the memory is found to be defective, the fault information is stored in the efuse module (electrically programmable fuse, electrically programmable fuse module) for fault repair. [0004] Specifically, the technology of using the efuse module to repair the memory is mainly based on the characteristics of polysilicon fuses. Taking advantage of the small initial resistance of ...

AI Technical Summary

Problems solved by technology

[0007] The embodiment of the present invention provides a circuit and a memory chip for repairing the memory, which are used to solve the technical problem of the interface incompatibility between the Mbisr module and the efuse module that have different timing interfaces in the memory chip in the prior art, and ensure the memory Compatibility between the Mbisr module interface and the efuse module interface of different timing interfaces in the chip

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