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An ion implantation dose automatic control method and system

An automatic control system and ion implantation technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve the problems of reducing the stability and danger of the semiconductor manufacturing process, and improve the usability , ensuring stability and security, and simplifying the complexity

Active Publication Date: 2019-12-03
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

This method directly modifies the implantation dose of the equipment during the implantation process, which has a certain degree of risk and reduces the stability of the semiconductor manufacturing process.

Method used

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  • An ion implantation dose automatic control method and system
  • An ion implantation dose automatic control method and system
  • An ion implantation dose automatic control method and system

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Embodiment Construction

[0062] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0063] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0064] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0065] According to the above-mentioned problems in the prior art, a method for automatically controlling the io...

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Abstract

The invention discloses a method and a system for automatically controlling the ion implantation dose, which belong to the technical field of semiconductor manufacture. The method includes the following steps: acquiring the influence parameters of ion implantation dose in the manufacture process of a specific layer before the current layer, and getting the target implantation dose of the current layer through processing according to all the influence parameters and the standard implantation dose of an implantation process corresponding to the manufacture process of the current layer; comparing the target implantation dose of the current layer with a preset target dose range to determine a target dose range matching the target implantation dose; and selecting an ion implantation program corresponding to the determined target dose range, and determining the ion implantation dose in the manufacture process of the current layer according to the selected ion implantation program. The system is implemented according to the method. The technical scheme has the beneficial effect that the complexity of ion implantation dose automatic control is reduced, and the stability and safety of implantation dose adjustment are ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an ion implantation dose automatic control method and system. Background technique [0002] In the semiconductor manufacturing process, in order to improve the yield rate of the product, the ion implantation dose of the current layer is usually adjusted according to the process data of the previous layer, such as the thickness of the dielectric silicon nitride film of the previous layer, or the width of the polysilicon gate line. The size and so on are used to adjust the dose of lightly doped drain ion implantation. [0003] In the prior art, there are mainly two implementation methods for controlling the ion implantation dose: [0004] One is to set the adjustment range of the injection program corresponding to the front-layer process data according to the sensitivity of the front-layer manufacturing process to the injection dose. The adjustment interval wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L21/66
CPCH01L21/265H01L22/20
Inventor 董卫一鸣赖朝荣王智苏俊铭
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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