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Thin film transistor structure and fabrication method thereof

The technology of a thin film transistor and its manufacturing method, which is applied in the field of thin film transistor structure and its manufacture, can solve the problems of poor working stability of the thin film transistor structure, and achieve the effects of solving poor working stability, improving working stability, and improving picture display quality

Inactive Publication Date: 2018-01-23
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
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Problems solved by technology

[0005] The object of the present invention is to provide a thin film transistor structure and a manufacturing method thereof that can improve the working stability of devices such as thin film transistors, thereby improving the picture display quality of the corresponding AMOLED display device; to solve the working stability of the existing thin film transistor structure poor technical issues

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  • Thin film transistor structure and fabrication method thereof
  • Thin film transistor structure and fabrication method thereof
  • Thin film transistor structure and fabrication method thereof

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Embodiment Construction

[0071] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0072] Please refer to Figure 1a , Figure 1a It is a structural schematic diagram of an embodiment of the thin film transistor structure of the present invention, Figure 1b for Figure 1a Top cross-sectional view of A-A' of the thin film transistor structure shown. The thin film transistor structure 10 of this embodiment includes a thin film substrate 11, a buffer layer 12, a metal oxide semiconductor layer 13, a gate insulating layer 14, a ...

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Abstract

The invention discloses a thin film transistor structure. The thin film transistor structure comprises a glass substrate, a buffer layer, a metal oxide semiconductor layer, a grid insulation layer, agrid metal layer, an interlayer insulation layer, a source metal layer, a drain metal layer and a protection layer, wherein a shielding metal layer is further arranged between the glass substrate andthe buffer layer, a metal oxide semiconductor layer contact hole penetrating through the grid insulation layer and the buffer layer is further formed in the grid insulation layer, and the grid metal layer is connected with the shielding metal layer via the metal oxide semiconductor layer contact hole. The invention also provides a fabrication method of the thin film transistor structure. By designof the shielding metal layer, the working stability of a device such as a thin film transistor in an active matrix / organic light emitting diode (AMOLED) driving circuit is improved, so that the imagedisplay quality of a corresponding AMOLED display device is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor structure and a manufacturing method thereof. Background technique [0002] With the development of technology, AMOLED (Active-matrix organic light emitting diode, active-matrix organic light-emitting diode) display devices are favored by more and more users. Existing AMOLED display devices generally adopt a 3T1C AMOLED driving circuit, that is, three thin film transistors and a capacitor form the AMOLED driving circuit. [0003] The thin film transistors in the existing AMOLED driving circuit are affected by the outgoing light and external light, which will cause the thin film transistors and other devices in the AMOLED driving circuit to work unstable, thereby affecting the picture display quality of the AMOLED display device. [0004] Therefore, it is necessary to provide a thin film transistor structure and a manufacturing method thereof to solve the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336
CPCH01L29/78633H01L29/78648H01L29/7869H01L27/1218H01L27/124H01L27/1248H01L29/78603
Inventor 余明爵任章淳
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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