Lateral double diffused metal oxide semiconductor device

Abstract

A lateral double-diffused metal oxide semiconductor element includes: a substrate, a gate structure, a drain region, a plurality of isolation structures, at least one doping region and a source region. The gate structure is on the substrate. The drain region and the source region are respectively located in the substrate on the first side and the second side of the gate structure. Both the isolation structure and the doping region are located in the substrate between the gate structure and the drain region, wherein the extension direction of the isolation structure is different from that of the gate structure. The doped region can be located between two isolation structures or under the isolation structure, wherein the doped region and the drain region have opposite conductivity states, so that the turn-on resistance of the lateral double-diffused metal oxide semiconductor device is reduced, and the gate structure and The electric field between the drain regions increases the breakdown voltage of the lateral double-diffused metal oxide semiconductor device.

Description

Technical field [0001] The present invention relates to a semiconductor device, and more particularly to a lateral double-diffused metal oxide semiconductor (LDMOS) device. Background technique [0002] In recent years, power semiconductor devices have been used in various semiconductor industries. Power semiconductor components include high-voltage integrated circuits, which typically include one high-voltage transistor or multiple high-voltage transistors usually on the same silicon chip as a low-voltage circuit. Among the above-mentioned integrated circuits, the most commonly used high-voltage components are lateral double diffused metal oxide semiconductor (LDMOS) transistors. In high-voltage integrated circuits, LDMOS structures can usually be manufactured by using some of the same techniques used to manufacture low-voltage circuits and logic circuits. Generally speaking, the current LDMOS structure is fabricated in a thick epitaxial layer with the conductivity state oppos...

AI Technical Summary

Problems solved by technology

[0005] However, traditional LDMOS transistors have high turn-on resistance due to the limitation of the length of the drift region, and the breakdown voltage cannot be further increased

Images