Junction field-effect transistor (JFET) pipe compatible process with double pole and P-ditch aligning automatically
A self-alignment and process technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as large manufacturing process deviation and large parasitic capacitance, achieve good consistency, large dynamic resistance, and reduce drift. effect of zone length
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[0040] First, the substrate is selected as a P-type 4-inch silicon wafer, with a resistivity of (8-13) Ω.cm and a thickness of (525±20) μm; then the substrate is cleaned: the silicon wafer needs to be chemically cleaned, The cleaning chemicals are concentrated sulfuric acid, hydrogen peroxide and hydrofluoric acid. Concentrated sulfuric acid and hydrogen peroxide are strong oxidants that can remove particles or dust on the surface of silicon wafers. In the process of boiling concentrated sulfuric acid, a natural oxide layer will be formed on the surface of the silicon wafer, which needs to be rinsed with hydrofluoric acid, rinsed with high-purity deionized water, and centrifugally dried under nitrogen protection.
[0041] Proportion of chemical reagents and ambient temperature:
[0042] Sulfuric acid:hydrogen peroxide=3:1 temperature is (115±5)℃
[0043] Hydrofluoric acid: water = 1:30 temperature is room temperature
[0044] Deionized water resistivity ≥ 18MΩ.cm.
[0045] ...
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