A lateral double diffused metal-oxide semiconductor device

Abstract

A lateral double diffused metal-oxide semiconductor device includes a substrate, a gate structure, a drain region, a plurality of isolation structures, at least one doped region, and a source region.The gate structure is on the substrate. The drain region and the source region are respectively located in the substrate on the first side and the second side of the gate structure. The isolation structure and the doped region are located in the substrate between the gate structure and the drain region, wherein the extension direction of the isolation structure is different from the extension direction of the gate structure. The doped region may be located between two isolation structures or below the isolation structures. The doped region and the drain region have opposite conductive states,so that the turn-on resistance of the lateral double-diffused metal-oxide semiconductor device is reduced, the electric field between the gate structure and the drain region is reduced, and the breakdown voltage of the lateral double-diffused metal oxide semiconductor device is improved.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a lateral double-diffused metal oxide semiconductor (LDMOS) device. Background technique [0002] In recent years, power semiconductor devices have been used in various semiconductor industries. Power semiconductor components include high-voltage integrated circuits that typically include one high-voltage transistor or multiple high-voltage transistors, usually on the same silicon die, as low-voltage circuits. In the above-mentioned integrated circuits, the most commonly used high-voltage components are lateral double-diffused metal-oxide-semiconductor (LDMOS) transistors. In high voltage integrated circuits, LDMOS structures can generally be fabricated using some of the same techniques used to fabricate low voltage circuits and logic circuits. In general, current LDMOS structures are fabricated in either thick epitaxial layers with the opposite conductivity state to t...

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Problems solved by technology

[0005] However, traditional LDMOS transistors have high turn-on resistance due to the limitation of the length of the drift region, and the breakdown voltage cannot be further increased

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