Exposure method, photoetching method and semiconductor manufacturing method

Abstract

The invention discloses an exposure method, a photoetching method and a semiconductor manufacturing method. The exposure method comprises the following steps: acquiring a thickness of a membrane layerto be exposed; judging whether the thickness of the membrane layer reaches a first thickness, and if yes, setting exposure energy according to the thickness of the membrane layer; and if not, acquiring a plane difference of the membrane layer; and setting the exposure energy according to the thickness and plane difference of the membrane layer. Therefore, when in height difference, the conditionthat the exposure energy is uncontrollable is avoided, so that the accuracy and uniformity of CD can be ensured, the production quality can be improved, and the yield can be increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an exposure method, a photolithography method and a semiconductor manufacturing method. Background technique [0002] In the photolithography process, the requirements for flatness are very high. Severe step height will lead to different thickness of photoresist, and different thickness will lead to difference in critical dimension (CD). [0003] In some processes, due to the strict control of the thickness of the film layer, it cannot be too thick, but the controllability of the thickness is not high, which often leads to the film layer being too thin. However, in the area that needs to be etched, it is impossible to fill up the film layer, that is to say, there will be a difference in height of the film layer, which will affect the CD of the subsequent layer. [0004] Therefore, how to improve this situation is imperative. Contents of the invention [0005] The obje...

AI Technical Summary

Problems solved by technology

Severe step height will lead to different thickness of photoresist, and different thickness will lead to difference in critical dimension (CD) size

[0003] In some processes, due to the strict control of the thickness of the film layer, it cannot be too thick, but the controllability of its thickness is not high, which often leads to the film layer being too thin

However, in the area that needs to be etched, it is impossible to fill the film layer, that is to say, there is a difference in the height of the film layer, which affects the CD of the rear layer.

Images