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semiconductor element

A semiconductor and component technology, applied in the field of high-voltage or medium-voltage semiconductor components, can solve the problems of poor utilization index of components, increase of overall area, and low saturation current of transistors, etc.

Active Publication Date: 2020-09-29
POWERCHIP SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Traditional high-voltage transistors generally have a relatively high operating voltage. In order to avoid the problems caused by the hot carrier effect (Hot Electron Effect), high-voltage transistors are usually designed to have a longer channel length. The long channel length causes the problem that the saturation current (Idsat) of the transistor becomes lower, and the gate width of the high-voltage transistor is widened to adjust the overall saturation current.
However, under the design of widening the length and width of the channel, it means that the overall area of ​​the device is increased, which makes the proper utilization of the area of ​​the device worse.

Method used

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Embodiment Construction

[0037] In order to enable those who are familiar with the technical field of the present invention to further understand the present invention, the preferred embodiments of the present invention are listed below, together with the accompanying drawings, to describe in detail the composition of the present invention and the desired effects .

[0038] Please refer to figure 1 and figure 2 ,in figure 1 is a schematic top view of the first embodiment of the semiconductor element of the present invention, and figure 2 for figure 1 A schematic partial cross-sectional view of the semiconductor element shown along the section line 1-1'. The semiconductor device 1A of this embodiment is a metal oxide semiconductor transistor, and a high voltage metal oxide semiconductor transistor is taken as an example, but not limited thereto. Such as figure 1 and figure 2 As shown, the semiconductor device 1A includes a substrate 100, two doped regions 102, a gate 104, and a spacer 106, wh...

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Abstract

The invention discloses a semiconductor member. The semiconductor member comprises a substrate, a doped zone, a gate and a gap wall. The substrate comprises an active zone and the doped zone is arranged inside the active zone of the substrate. The gate is arranged on the surface of the substrate and is in an active zone and in a first direction parallel with the surface of the substrate. The gateis arranged between two doped zones and the gate comprises a plurality of openings. Part of gap wall covers the side wall of the gate and the other part of the gap wall is filled in the openings of the gate.

Description

technical field [0001] The present invention relates to a semiconductor element, in particular to a high voltage (HV) or medium voltage (MV) semiconductor element with a gate opening. Background technique [0002] Traditional high-voltage transistors generally have a relatively high operating voltage. In order to avoid the problems caused by the hot carrier effect (Hot Electron Effect), high-voltage transistors are usually designed to have a longer channel length. The long channel length causes the problem that the saturation current (Idsat) of the transistor becomes lower, and it is developed to widen the gate width of the high-voltage transistor to increase the overall saturation current. However, under the design of widening the length and width of the channel, it means that the overall area of ​​the device is increased, which makes the index of proper utilization of the area of ​​the device worse. To sum up, how to take into account the proper utilization of the device ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/4232H01L29/78
Inventor 车行远李芃葳彭康钧
Owner POWERCHIP SEMICON MFG CORP