Longitudinal double-diffused metal-oxide-semiconductor field-effect transistor with stepped high-K dielectric layer element

An oxide semiconductor, vertical double diffusion technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as not showing advantages

Active Publication Date: 2018-03-13
XIDIAN UNIV
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  • Description
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  • Application Information

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  • Longitudinal double-diffused metal-oxide-semiconductor field-effect transistor with stepped high-K dielectric layer element

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Embodiment Construction

[0046] like figure 1 As shown, the vertical double-diffused metal-oxide-semiconductor field-effect transistor of the stepped high-K dielectric layer elements includes:

[0047] The elemental semiconductor material substrate 7 is used as the drain region at the same time, the elemental semiconductor material is silicon material or germanium material, and the doping concentration is the concentration of general elemental semiconductor single crystal material, the typical value is 1×10 13 cm -3 ~1×10 15 cm -3 ;

[0048] The drift region 9 formed by the epitaxial layer on the substrate; the depth (length) of the drift region is determined according to the breakdown voltage requirements of the device, for example, when the withstand voltage is 600V, an elemental semiconductor material of 25-50 μm is epitaxially grown on the substrate form a drift zone;

[0049] a base region 3 formed by doping on the drift region;

[0050] A trench is etched between the left and right base re...

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Abstract

The invention proposes a longitudinal double-diffused metal-oxide-semiconductor field-effect transistor (VDMOS) with a stepped high-K dielectric layer element semiconductor. In the device, stepped high dielectric constant (High K) dielectric layers are mainly formed at two sides of a drift region of the device, and a low dielectric constant dielectric layer is arranged below a high k dielectric layer step. When the device is switched off, an auxiliary depleted drift region is modulated through an electric field by the High K dielectric layer, the depletion capability of the drift region of thedevice is substantially improved, so that the doping concentration of the drift region of the device is increased, and the conduction resistance is reduced. A new electric field peak can be caused inthe drift region by stepped high-k dielectric layer optimized according to regions, and the electric field distribution of the drift region is further optimized; and by combining the advantages, thedevice has higher voltage resistance and lower conduction loss under the condition of same length of the drift region.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a trench (Trench) type vertical double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] Power semiconductor devices are the core components of power electronics technology, and are widely used in consumer electronics, automotive electronics, communications, transportation, industrial production, and new energy. Power semiconductor devices are core devices for green, low power consumption, energy saving and environmental protection. However, in the field of high-voltage applications of power devices, as the breakdown voltage of the device increases, the thickness of the power VDMOS epitaxial layer increases continuously, and the doping concentration of the drift region gradually decreases, resulting in the on-resistance of the device decreasing with 2.5% of the breakdown voltage of the device. The times increase sharply, which increase...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0653H01L29/66734H01L29/7811H01L29/7813
Inventor段宝兴谢丰耘赵逸涵曹震杨银堂
OwnerXIDIAN UNIV