Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Refresh control device

A technology for controlling devices and controllers, applied in instruments, static memory, memory systems, etc., can solve problems such as corrupting data, and achieve the effect of reducing refresh failures

Active Publication Date: 2018-04-03
SK HYNIX INC
View PDF8 Cites 62 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Word line crosstalk can corrupt a memory cell's data before it is refreshed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Refresh control device
  • Refresh control device
  • Refresh control device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] Hereinafter, the refresh control device according to the present disclosure will be described below by way of exemplary embodiments with reference to the accompanying drawings.

[0024] figure 1 is a diagram for describing word line crosstalk, illustrating a part of a cell array included in a memory device.

[0025] exist figure 1 In , "WLK" indicates a frequently activated word line, and "WLK-1" and "WLK+1" indicate word lines adjacent to word line WLK. In addition, "CELL_K" denotes a memory cell coupled to word line WLK, "CELL_K-1" denotes a memory cell coupled to word line WLK-1, and "CELL_K+1" denotes a memory cell coupled to word line WLK+1. storage unit. The memory cells include cell transistors TR_K, TR_K-1, and TR_K+1 and cell capacitors CAP_K, CAP_K-1, and CAP_K+1, respectively.

[0026] exist figure 1 , when the word line WLK is activated or deactivated, a coupling effect may occur between the word line WLK and the word lines WLK-1 and WLK+1, thereby affe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A refresh control device may include a first oscillator configured to generate a first oscillation signal, a second oscillator configured to generate a second oscillation signal having a different cycle from the first oscillation signal, a first address controller configured to latch an address in response to the first oscillation signal, and output the latched address when a refresh signal is enabled. The refresh control device may also include a second address controller configured to latch the address in response to the second oscillation signal, and output the latched address when the refresh signal is enabled. Further included may be a selector configured to select any one of the output of the first address controller and the output of the second address controller in response to a selection signal, and output the selected output as a row hammer address.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2016-0123184 filed with the Korean Intellectual Property Office on September 26, 2016, the contents of which are hereby incorporated by reference in their entirety. technical field [0003] Various embodiments relate to a refresh control device, and more particularly, to a technique for overcoming rowhammering. Background technique [0004] As the degree of integration of memories has increased, the pitch between word lines included in the memories has decreased. The reduction in spacing between word lines has increased the coupling effect between adjacent word lines. [0005] A word line is switched between an active state and an inactive state whenever data is input to or output from a memory cell. However, the aforementioned increase in the coupling effect between adjacent word lines may corrupt data of memory cells coupled to word lines adjace...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/406
CPCG11C11/406G11C11/40611G11C11/40615G11C11/40618G06F2212/7211G06F1/08G06F1/24
Inventor 金大石金载镒
Owner SK HYNIX INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com