Semiconductor laser patterned electrode injection method
A patterned electrode and laser technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of high carrier consumption, reduced internal quantum efficiency, uneven distribution of photons and carrier densities, etc. The effect of uniform distribution and improved output power
Pending Publication Date: 2018-04-20
SUZHOU EVERBRIGHT PHOTONICS CO LTD
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Problems solved by technology
[0002] Due to the difference in reflectivity between the front and back of the semiconductor laser and the influence of the cavity length, the photon and carrier density will be unevenly distributed in the longitudinal direction, which will eventually lead to the longitudinal space hole burning effect under high current, limiting the output power of the semiconductor laser
[0003] The traditional electrode preparation method adopts a uniform injection scheme, but the carrier consumes more at the front end, the greater the operating current, the longer the cavity length, and the greater the difference in carrier density between the front and rear ends, which will lead to a decrease in internal quantum efficiency
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[0017] The implementation of the present invention will be described in detail below in conjunction with the accompanying drawings and examples, so as to fully understand and implement the process of how to apply technical means to solve technical problems and achieve technical effects in the present invention. It should be noted that, as long as there is no conflict, each embodiment and each feature in each embodiment of the present invention can be combined with each other, and the formed technical solutions are all within the protection scope of the present invention.
[0018] A semiconductor laser patterned electrode injection method, comprising:
[0019] Step 1) dividing the semiconductor laser electrode into several rectangular equal parts from the longitudinal direction;
[0020] Step 2) From the front end to the back end, different mask areas and injection current area sizes are implemented according to the flow direction of the current.
[0021] Preferably, the mask ...
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The invention discloses a semiconductor laser patterned electrode injection method, and the method comprises the steps: 1), dividing a semiconductor laser electrode into a plurality of rectangular parts in a longitudinal direction; 2), employing different mask areas and injection current areas from the front end to the rear end according to the flow direction of a current. The scheme employs a patterned electrode preparation method for compensating for the carrier loss of the front end, and achieves the uniform distribution of carriers and photons when the longitudinal electrode of the semiconductor laser is under the large-current working condition, thereby achieving the purpose of improving the output power.
Description
technical field [0001] The invention belongs to a semiconductor laser patterned electrode injection method, which is applied to the electrode preparation step in the semiconductor laser process preparation process. Background technique [0002] Due to the difference in reflectivity between the front and back of the semiconductor laser and the influence of the cavity length, the photon and carrier density will be unevenly distributed in the longitudinal direction, which will eventually lead to the longitudinal space hole burning effect under high current, which limits the output power of the semiconductor laser. [0003] The traditional electrode preparation method adopts a uniform injection scheme, but the carrier consumes more at the front end, the greater the operating current, the longer the cavity length, and the greater the difference in carrier density between the front and rear ends, which will lead to a decrease in internal quantum efficiency. Contents of the invent...
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IPC IPC(8): H01S5/042
CPCH01S5/0425
Inventor 赵智德
Owner SUZHOU EVERBRIGHT PHOTONICS CO LTD