How to Improve the Production Efficiency of the Injection Machine
A technology of production efficiency and injection machine, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., and can solve the problem of serious volatilization of photoresist
Active Publication Date: 2019-11-19
SHANGHAI HUALI MICROELECTRONICS CORP
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[0009] Combining with Table 2, we further analyzed the difference of the same injection procedure between products A and B, and found that the photoresist opening ratio (TR%) of product B is much larger than that of product A, so the photoresist volatilization of product A will be more serious than that of product B during injection. , the production efficiency will be much lower than that of product B
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[0037] The method of the embodiment of the present invention is formed on the basis of analyzing the existing technical problems. Before introducing the technical solution of the embodiment of the present invention in detail, analyze the technical problems of the existing method:
[0038] Such as figure 1 Shown is a schematic diagram of the implanter performing scanning implantation on the wafer; in the ion implantation process, the wafer 103 will be placed in the implant chamber of the implanter, the implanter provides an ion implantation source 101, and the ion implantation source forms an implantation The beam is injected into the surface of the wafer 103, in figure 1 The injection beam injected into the surface of the wafer 103 is represented by 102 , and it can be seen that the width of the injection beam is W and the height is H. Since the area of the injection beam 102 is smaller than the area of the wafer 103, in order to achieve full-chip implantation of the wafe...
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The invention discloses a method for improving production efficiency of an injecting machine. The method comprises the following steps of 1, adjusting the injecting beam of the injecting machine according to the requirement of the injection time at a time and reducing the injection time at a time by increasing the size of the injecting beam; 2, scanning a wafer in different regions and performingion implantation on each scanning region to achieve full-area injection of the wafer by the injecting machine, and adjusting the injecting beam according to the requirement of reducing the overall scanning time. The water vapor generated by the collision between the injecting beam and a photoresist increases the pressure of an injecting cavity, the size of the injecting beam needs to be set to ensure that the pressure of the injecting cavity during the entire injecting scanning is less than an upper limit value, and thus the stop of ion implantation does not occur and the overall scanning timeis reduced. The method can effectively improve the production efficiency of a photoresist product with a small aperture opening ratio, shorten the time for completing the full-area injection of a single wafer and increase WPH.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to a method for improving the production efficiency of an injection machine. Background technique [0002] With the rapid development of ultra-large-scale integrated circuit technology, the size of semiconductor devices is shrinking, so ion implantation in the manufacturing process requires multi-step ion implantation, including ultra-shallow junction implantation, pocket structure implantation, ring (Halo ) structure implantation, channel implantation, high-precision sidewall implantation and ion implantation in the pixel area. As the number of ion implantation steps increases, the requirements for the productivity of the implanter also increase. The ion implantation dose (D) has the following relationship with the implantation beam (I), implantation time (t), charge (q) of the implantation source species, and beam area (beam width W and beam height H): D=I *t / (q*...
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IPC IPC(8): H01L21/265H01L21/67
CPCH01L21/265H01L21/67253H01L21/67276
Inventor 叶锋袁立军
Owner SHANGHAI HUALI MICROELECTRONICS CORP