Automatic adjustment device and method for levelness of plasma etching machine

An automatic adjustment and etching machine technology, which is applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of limited accuracy of naked eye observation, decreased accuracy, and inability to know the level of etching machines.

Active Publication Date: 2018-05-11
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF11 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, this method of manually adjusting the level of the etching machine mainly has the following two problems: First, due to the limited accuracy of human naked eye observation, the method of using a bubble level to adjust the level can only reach a maximum of 0.1 degrees The precision, that is to say, after the leveling adjustment is completed, the etching machine will still have an inclination angle of at least 0.1 degrees, and the inclination angle of this order will still affect the uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Automatic adjustment device and method for levelness of plasma etching machine
  • Automatic adjustment device and method for levelness of plasma etching machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings.

[0028] Such as figure 1 As shown, the present invention provides an automatic adjustment device for the levelness of a plasma etching machine. Wherein, the plasma etching machine includes an etching machine cavity 1, which is composed of a top cover 2 at the top, a bottom wall at the bottom, and a side wall connected between the top cover and the bottom wall to form an airtight The permanent internal reaction space is in a vacuum state during the plasma etching process. Wherein, the top cover 2, the bottom wall and the side wall are all made of metal materials and grounded.

[0029] A shower head is provided under the top cover 2 of the etching machine cavity 1 for introducing the reaction gas for etching the substrate into the etching machine cavity 1 and maintaining a certain flow rate. The top cover 2 is provided with a first motor and grounded. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an automatic adjustment device for the levelness of a plasma etching machine, which comprises an inclination angle sensor, a plurality of adjustment assemblies and a controller, wherein the inclination angle sensor is fixedly installed on the plasma etching machine in a mode of being parallel to an electrostatic sucker of a bearing substrate in the plasma etching machine and is used for detecting the inclination angle and inclination direction of the plasma etching machine; the plurality of adjustment assemblies are respectively connected below the bottom of the plasmaetching machine; and the controller is connected with the inclination angle sensor and each adjustment assembly, and controls each adjustment assembly to correspondingly perform a rising or falling operation according to the received inclination angle and inclination direction of the plasma etching machine so as to enable the plasma etching machine to stay at a level state. The automatic adjustment device monitors the levelness of the plasma etching machine in real time through the inclination angle sensor, automatically accomplishes levelness adjustment with the accuracy being higher than 0.1 degree under the condition of not opening a cavity of the etching machine and ensures the uniformity of substrate etching.

Description

technical field [0001] The invention relates to a device and method for adjusting the levelness of a plasma etching machine, in particular to a device and method for automatically adjusting the levelness of a plasma etching machine by using an inclination sensor, and belongs to the technical field of plasma etching machines. Background technique [0002] Plasma etching machine, by introducing a reaction gas containing an appropriate etchant or deposition source gas into the chamber of the vacuum etching machine, and then applying radio frequency energy to the chamber of the etching machine to dissociate the reaction gas to generate plasma, It is used to process the surface of the substrate placed in the cavity of the etching machine. [0003] The plasma etching machine commonly used in the prior art includes an etching machine cavity, which is composed of a top cover at the top, a bottom wall at the bottom, and a side wall connected between the top cover and the bottom wall,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01J37/02H01J37/305
CPCH01J37/023H01J37/3056
Inventor 刘季霖连增迪吴狄
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products