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Light emitting device

A technology of light-emitting device and light-emitting layer, which is applied to electrical components, electric solid-state devices, circuits, etc., can solve the problem of insufficient brightness of micro light-emitting diodes, and achieve the effect of improving light-emitting efficiency and/or brightness

Inactive Publication Date: 2018-05-22
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In other words, there is a problem of insufficient brightness in micro-LEDs

Method used

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Embodiment Construction

[0035] Figure 1A to Figure 1E It is a schematic cross-sectional view of the manufacturing process of the light emitting device according to an embodiment of the present invention. Please refer to Figure 1A , first, a growth substrate 10 is provided. In this embodiment, the growth substrate 10 is, for example, a sapphire substrate (Sapphire), but the invention is not limited thereto. Next, the semiconductor stack 20 is formed on the growth substrate 10 . The semiconductor stack 20 includes a first semiconductor layer 110 , a second semiconductor layer 120 and a light emitting layer 130 located between the first semiconductor layer 110 and the second semiconductor layer 120 . For example, in this embodiment, the first semiconductor layer 110 includes a P-type semiconductor layer (for example: P-GaN), the second semiconductor layer 120 includes an N-type semiconductor layer (for example: N-GaN), and the light emitting layer 130 includes It is a multiple quantum well structur...

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Abstract

The invention discloses a light emitting device, including a first semiconductor layer, a light emitting layer, a second semiconductor layer, an insulating layer, a first electrode, and a second electrode. The light emitting layer is disposed on the first semiconductor layer. The second semiconductor layer is disposed on the light emitting layer. The insulating layer is at least disposed on the sidewall of the first semiconductor layer. The first electrode is disposed on the bottom surface of the first semiconductor layer and at least part of the insulating layer. The second electrode is disposed on the second semiconductor layer.

Description

technical field [0001] The invention relates to a light emitting device. Background technique [0002] With the advancement of technology, LEDs have become common and widely used components in various fields. As a light source, light-emitting diodes have many advantages, including low energy consumption, long service life, and fast switching speed. Therefore, traditional light sources have been gradually replaced by light-emitting diodes. [0003] In addition to being a light source, light-emitting diodes have also been used in the display field. For example, micro-LED displays using micro-LEDs as pixels have been developed in recent years. However, compared with traditional light emitting diodes, micro light emitting diodes have a smaller light emitting surface area. Due to the small area of ​​the light-emitting surface of the micro-LED, the light-emitting efficiency is also relatively low. That is to say, there is a problem of insufficient brightness in micro light em...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/38
CPCH01L33/385H01L33/405H01L33/44H01L25/071H01L27/1214H01L33/0093H01L33/06H01L33/32H01L33/62H01L2933/0016H01L2933/0025H01L2933/0066
Inventor 曹梓毅蔡正晔
Owner AU OPTRONICS CORP