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Amplifier devices with envelope signal shaping for gate bias modulation

An envelope signal and signal shaping technology, applied to amplifiers with semiconductor devices/discharge tubes, components of amplifiers, amplifiers, etc., can solve problems such as low fractional bandwidth and linearity reduction

Pending Publication Date: 2018-06-29
NXP USA INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, amplifier bandwidth and linearity are also important parameters that should be considered, and many amplifier designs with high theoretical power efficiency may have typically lower fractional bandwidth and reduced linearity

Method used

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  • Amplifier devices with envelope signal shaping for gate bias modulation
  • Amplifier devices with envelope signal shaping for gate bias modulation
  • Amplifier devices with envelope signal shaping for gate bias modulation

Examples

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Embodiment Construction

[0043] Embodiments described herein include amplifiers commonly used in radio frequency (RF) applications. In these embodiments, the amplifier is configured to use gate bias modulation in a manner that can help improve amplifier performance. In particular, the amplifier can be implemented to use a shaped envelope signal that is applied to a transistor gate of the amplifier to provide gate bias modulation. So configured, the shaped envelope signal can contribute to relatively high performance of the amplifier, including relatively high power efficiency and linearity.

[0044] In various embodiments, attenuators and / or phase shifters may be used to shape the envelope signal for gate bias modulation. In such embodiments, attenuators and / or phase shifters may shape the envelope signal in the analog domain in a manner that may help improve amplifier efficiency with relatively low device complexity. Furthermore, the attenuators and / or phase shifters can be digitally controlled to ...

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Abstract

The embodiments described herein include amplifiers configured for use in radio frequency (RF) applications. In accordance with these embodiments, the amplifiers are implemented to generate a shaped envelope signal, and to apply the shaped envelope signal to transistor gate(s) of the amplifier to provide gate bias modulation. So configured, the shaped envelope signal may facilitate high linearityin the amplifier.

Description

technical field [0001] Embodiments of the subject matter described herein relate generally to amplifiers, and more specifically, to radio frequency (RF) power amplifiers for a variety of applications. Background technique [0002] In general, amplifiers are used to increase the power of a signal. For example, an amplifier can be used to convert a low power radio frequency (RF) signal into a larger RF signal for driving a transmitter's antenna. In such cases, the amplifier may be implemented as part of an overall power amplifier used by the RF transmit system. [0003] The power consumed by power amplifiers often accounts for a substantial portion of the total power consumed by a transmission system. Thus, the efficiency of a power amplifier (ie, the amplifier's output power divided by the total DC power supplied to the amplifier) ​​is an amplifier quality that designers are constantly striving to increase. [0004] However, amplifier bandwidth and linearity are also impor...

Claims

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Application Information

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IPC IPC(8): H03F3/21H03F3/193H03F1/02H03F1/42H03F1/32
CPCH03F1/0288H03F1/3205H03F1/42H03F3/193H03F3/211H03F1/3241H03F1/3282H03F3/245H04L25/03834H03G3/3042H03F1/0266H03F2200/451H03F2200/18H03F2200/102H03G2201/106
Inventor 阿卜杜勒拉赫曼·M·S·艾哈迈德约瑟夫·斯陶丁格
Owner NXP USA INC
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