Amplifier devices with envelope signal shaping for gate bias modulation
An envelope signal and signal shaping technology, applied to amplifiers with semiconductor devices/discharge tubes, components of amplifiers, amplifiers, etc., can solve problems such as low fractional bandwidth and linearity reduction
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[0043] Embodiments described herein include amplifiers commonly used in radio frequency (RF) applications. In these embodiments, the amplifier is configured to use gate bias modulation in a manner that can help improve amplifier performance. In particular, the amplifier can be implemented to use a shaped envelope signal that is applied to a transistor gate of the amplifier to provide gate bias modulation. So configured, the shaped envelope signal can contribute to relatively high performance of the amplifier, including relatively high power efficiency and linearity.
[0044] In various embodiments, attenuators and / or phase shifters may be used to shape the envelope signal for gate bias modulation. In such embodiments, attenuators and / or phase shifters may shape the envelope signal in the analog domain in a manner that may help improve amplifier efficiency with relatively low device complexity. Furthermore, the attenuators and / or phase shifters can be digitally controlled to ...
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