Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of tin dioxide-based gas sensitive material and hydrogen sulfide gas sensor chip, hydrogen sulfide gas sensor

A gas sensor, tin dioxide technology, applied in the direction of material resistance, material analysis, material analysis through electromagnetic means, etc., can solve problems such as poor anti-interference ability, low sensitivity, and easy cracking of the film

Active Publication Date: 2020-10-27
苏州慧闻纳米科技有限公司
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] A further object of the present invention is to solve the problem of SnO in the prior art 2 The technical problem of poor anti-interference ability of materials and low sensitivity
[0006] Another further object of the present invention is to solve the technical problem that the hydrogen sulfide gas sensor in the prior art is a thick film sensor, and the film is prone to cracking at high temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of tin dioxide-based gas sensitive material and hydrogen sulfide gas sensor chip, hydrogen sulfide gas sensor
  • Preparation method of tin dioxide-based gas sensitive material and hydrogen sulfide gas sensor chip, hydrogen sulfide gas sensor
  • Preparation method of tin dioxide-based gas sensitive material and hydrogen sulfide gas sensor chip, hydrogen sulfide gas sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] figure 1 A schematic flowchart of a method for preparing a tin dioxide-based gas sensitive material according to an embodiment of the present invention is shown. Such as figure 1 As shown, the preparation method includes the following steps:

[0038] S100. Add a weak acid to the tin salt solution, adjust the pH of the solution to 1-2, and stir evenly at the first preset temperature;

[0039] S200. Add a weak base at a preset rate during the stirring process until the pH of the solution is adjusted to 2-3, and continue stirring until it is in a gel state;

[0040] S300, washing and taking out the gel, heating the gel to a second preset temperature, and then adding a weak acid to adjust the pH to 1.5-2;

[0041] S400, drying and sintering to obtain tin dioxide powder;

[0042] S500, adding metal salt and volatile alcohol solvent to tin dioxide powder, and grinding to obtain slurry, and sintering at a third preset temperature for a preset time to obtain a metal-doped tin dioxide ba...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a tin dioxide-based gas sensitive material. The method comprises the following steps: adding a weak acid into a salt solution of tin, regulating the pH value of the solution to be 1-2, and uniformly stirring at a first present temperature; adding a weak base at a preset rate until the pH value of the solution is regulated to 2-3, and continuously stirring to be in a gel state; taking out the gel, heating the gel to a second preset temperature, and adding a weak acid to regulate the pH value to be 1.5-2; adding polyethylene glycol, drying and sintering to obtain tin dioxide powder; adding metal salts and volatile alcohol solvents into the tin dioxide powder, grinding to obtain slurry, and sintering for preset time, thereby obtaining the metal doped tin dioxide-based gas sensitive material. The invention further provides a preparation method of a hydrogen sulfide gas sensor chip and a hydrogen sulfide gas sensor. By changing the preparationprocess of the gas sensitive material, the technical problem that a SnO2 base material does not have any response to H2S gas at a normal temperature is solved.

Description

Technical field [0001] The invention relates to the technical field of gas sensors, in particular to a method for preparing a tin dioxide-based gas sensitive material and a hydrogen sulfide gas sensor chip, and a hydrogen sulfide gas sensor. Background technique [0002] At present, most of the gas sensors used to detect hydrogen sulfide are electrochemical or semiconductor sensors. However, electrochemical sensors generally have the problem of being too large, and may cause poisoning and permanent damage due to continuous exposure for a long time, so their life is not long. Among the semiconductor sensors, the most mature and most used semiconductor gas sensors are generally metal oxide semiconductor gas sensors, which have high sensitivity, long life, and can withstand high-concentration hydrogen sulfide exposure, and they can quickly recover without damaging their functions. advantage. However, metal oxide semiconductor gas sensors have the disadvantage of excessive power co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/125
Inventor 孙旭辉吴庆乐张书敏徐瑞张平平何跃王国栋熊金龙
Owner 苏州慧闻纳米科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products