Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor array substrate and preparation method thereof

一种薄膜晶体管、阵列基板的技术，应用在薄膜晶体管阵列基板及其制备领域，能够解决刻蚀液损伤、薄膜晶体管电学特性稳定性劣化等问题，达到提升稳定性、避免不良影响的效果

Active Publication Date: 2020-01-17
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, after preparing and forming the active layer 4, when performing the mask (Mask) process for forming the source electrode 5 and the drain electrode 6, the surface of the channel region of the active layer 4 is easily damaged by the etching solution, thereby causing a thin film Deterioration of transistor electrical characteristics such as reliability and threshold voltage stability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor array substrate and preparation method thereof
  • Thin film transistor array substrate and preparation method thereof
  • Thin film transistor array substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] This embodiment first provides a thin film transistor array substrate, see figure 2 with image 3 ,among them, figure 2 Is a schematic diagram of the planar structure of the thin film transistor array substrate, image 3 Yes figure 2 A cross-sectional view along the X-X line, and figure 2 The insulating layer in the array substrate is not shown in. Such as figure 2 with image 3 As shown, the thin film transistor array substrate includes a pixel unit 10a defined by the intersection of a data line 40 and a gate line 50. The pixel unit 10a is provided with a thin film transistor 20 and a pixel electrode 30. The thin film transistor 20 and the The pixel electrodes 30 are electrically connected to each other.

[0049] The thin film transistor 20 includes a source electrode 21, a first insulating layer 22, a semiconductor active layer 23, a gate electrode 24 and a drain electrode 25 formed on the base substrate 10. Specifically, the source electrode 21 is formed on the bas...

Embodiment 2

[0072] As the use time of the thin film transistor array substrate increases, the threshold voltage of the thin film transistor on the array substrate will drift, resulting in poor electrical characteristics of the thin film transistor. For this reason, this embodiment provides another method on the basis of Embodiment 1. A thin film transistor array substrate.

[0073] Refer to Figure 5 with Image 6 The difference between the thin film transistor array substrate provided in this embodiment and the first embodiment is that in this embodiment, the thin film transistor 20 further includes a sub-gate electrode 27, and the array substrate further includes a sub-gate line 60.

[0074] Specifically, such as Figure 5 with Image 6 On the basis of embodiment 1, a gate groove 223 is further provided in the first insulating layer 22, the gate groove 223 surrounds the outer side of the annular groove 221, and the secondary gate electrode 27 is formed in the gate groove 223 and disposed opp...

Embodiment 3

[0086] In some thin film transistor array substrates in the prior art, the pixel units are provided with main pixel electrodes and sub-pixel electrodes to form a multi-domain pixel structure. In the multi-domain pixel structure, how to make the main pixel electrode and the sub-pixel electrode obtain different pixel potentials is a problem that needs to be solved. For this reason, this embodiment provides another thin film transistor array on the basis of Embodiment 1. Substrate.

[0087] Such as Figure 8 As shown, the thin film transistor array substrate includes a pixel unit 10a defined by the intersection of a data line 40 and a gate line 50. The pixel unit 10a is provided with three thin film transistors arranged at intervals and a main pixel electrode 30a and a sub pixel electrode 30b. , The three thin film transistors are the first thin film transistor 20a, the second thin film transistor 20b, and the third thin film transistor 20c. The structures of the first thin film tr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a thin film transistor array substrate, which comprises: preparing and forming a data line and a source electrode on a base substrate, and the source electrode is in a ring structure; forming a first insulating layer on the base substrate; An annular groove is formed by etching on the first insulating layer, and the source electrode is exposed from the annular groove; a semiconductor active layer is formed in the annular groove; The area surrounded by the groove is etched to form a concave hole; a gate line, a gate electrode and a drain electrode are formed on the first insulating layer, the gate electrode is formed in the concave hole, and the drain electrode is connected to On the semiconductor active layer; prepare and form a second insulating layer on the first insulating layer, etch to form a pixel via hole in the second insulating layer; prepare and form a pixel electrode on the second insulating layer, and the pixel electrode passes through the pixel The via is connected to the drain electrode. The invention also discloses the thin film transistor array substrate prepared by the above preparation method.

Description

Technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a thin film transistor array substrate and a preparation method thereof. Background technique [0002] Flat panel display devices have many advantages, such as thin body, power saving, and no radiation, and have been widely used. Existing flat panel display devices mainly include Liquid Crystal Display (LCD) and Organic Light Emitting Display (OLED). Thin Film Transistor (TFT) array substrates are an important part of flat panel display devices and can be formed on glass substrates or plastic substrates. [0003] The thin film transistor array substrate includes thin film transistors arranged in an array on a base substrate. In traditional technology, such as figure 1 As shown, the thin film transistor includes a gate electrode 2 formed on a glass substrate 1, a gate insulating layer 3 covering the gate electrode 2, an active layer 4 formed on the gate insulating layer 3...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1222H01L27/1259H01L27/127H01L27/1225H01L27/124H01L29/78642H01L29/78696
Inventor 周志超夏慧陈梦
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com