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A method of manufacturing a semiconductor device

A manufacturing method and semiconductor technology, applied in the manufacture of microstructure devices, processes for producing decorative surface effects, coatings, etc., can solve the problems of low performance and yield of MEMS devices, poor bonding quality, etc.

Active Publication Date: 2020-08-18
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the process of forming MEMS devices, most of the current bonding processes have poor bonding quality, which makes the performance and yield of the prepared MEMS devices lower

Method used

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  • A method of manufacturing a semiconductor device
  • A method of manufacturing a semiconductor device
  • A method of manufacturing a semiconductor device

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Experimental program
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Embodiment 1

[0048] Below, refer to figure 1 as well as Figures 2A-2G to describe the detailed steps of an exemplary method for fabricating a semiconductor device provided by an embodiment of the present invention. in, figure 1It is a schematic flow chart of a method for manufacturing a semiconductor device according to another embodiment of the present invention, which specifically includes:

[0049] Step S1 : providing a first wafer, and a bonding ring and a stop layer covering the bonding ring are formed on the surface of the first wafer;

[0050] Step S2: Etching a partial thickness of the stop layer to form grooves on the inner and outer sides of the engagement ring and a stop ring spaced from the engagement ring by the grooves, wherein the grooves expose the a portion of the sidewall of the engagement ring;

[0051] Step S3: performing a cleaning step to remove residues formed on the sidewalls of the bonding ring during the etching process.

[0052] The manufacturing method of ...

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Abstract

The invention relates to a manufacturing method of a semiconductor device. The method comprises the steps of: providing a first wafer, and forming a joint ring and a stop layer covering the joint ringon the surface of the first wafer; etching a partial thickness of the stop layer so as to form grooves and stop rings spaced from the joint ring by the grooves both inside and outside the joint ring,wherein the grooves are exposed out of part of the side wall of the joint ring; and executing the cleaning step so as to remove residues formed on the side wall of the joint ring in the etching process. In the method, in the process of forming the stop rings on both sides of the joint ring, the stop layer is only partially etched, but the stop layer on the surface of the first wafer is not totally removed, so that the stop layer continuously covers the surface of the first wafer, thereby forming protection on the first wafer and avoiding loss on the first wafer in the cleaning step.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a method for manufacturing a semiconductor device. Background technique [0002] With the continuous development of semiconductor technology, in the market of sensor (motion sensor) products, smart phones, integrated CMOS and micro-electromechanical systems (MEMS) devices have increasingly become the most mainstream and advanced technologies. The development direction of such transmission sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Among them, micro-electromechanical systems (MEMS) have obvious advantages in terms of volume, power consumption, weight and price. So far, a variety of different sensors have been developed, such as pressure sensors, acceleration sensors, inertial sensors and other sensors. [0004] In the field of MEMS, the cavity structure in the MEMS sensor is formed by bonding, and a widely use...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
CPCB81C1/00523B81C1/00777
Inventor 许继辉
Owner SEMICON MFG INT (SHANGHAI) CORP