Manufacturing method of semiconductor chip
A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.
Active Publication Date: 2021-08-17
TDK CORPARATION
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0003] Here, the formation process of micro-protrusions includes solder printing method, solder ball mounting, plating method, etc., but the voids generated by gas generated during the reaction process such as organic matter or water become a technical problem.
Method used
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Examples
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Embodiment 1～7
[0064] As Example 1, a semiconductor chip having microbumps as follows was produced. First, the substrate was plated with Cu, Ni, and Sn by electrolytic plating. After placing this in the heating furnace, the atmospheric pressure in the heating furnace was adjusted, and the concentration and flow rate of nitrogen or formic acid gas supplied to the heating furnace were adjusted. As a result, the plated film was melted, and a sample of a semiconductor chip on which microbumps were formed was produced. The height of the Cu plating layer is 17 μm, the height of the Ni plating layer is 3 μm, the height of the micro-protrusion is 15 μm, and the diameter of the micro-protrusion is 35 μm. Observation of the sample with transmitted X-rays revealed voids within the microprotrusions. The sample and pressure imparting parts are prepared. The pressure imparting part is made with SiO 2 film of Si wafers. SiO 2 The Si wafer was placed on the micro-bumps in such a way that the surface w...
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Abstract
The present invention provides a method for manufacturing a semiconductor chip. A semiconductor chip is obtained by laminating a plurality of semiconductor chips having a substrate, a conductive portion formed on the substrate, and microbumps formed on the conductive portion. Wherein, it is equipped with a heating process of flowing a reducing gas into the space where the semiconductor chip is arranged in an inert atmosphere, and heating at a temperature above the melting point of the micro-protrusion. part.
Description
technical field [0001] The present invention relates to a method of manufacturing a semiconductor chip. Background technique [0002] Conventionally, in three-dimensional mounting of a semiconductor package, wire bonding is used to connect a semiconductor chip to a semiconductor chip or to an interposer. Instead of this wire bonding, a three-dimensional mounting technology that connects semiconductor chips to each other via through electrodes and bumps has been developed. The penetrating electrodes are required to have a short connecting line length (for example, 50 μm) as a standard, and the bumps connecting the electrodes are also required to have fine bumps. The technology corresponding to this bump pitch below 50 μm is called microbumping. As described in US Pat. No. 9,136,159, by connecting semiconductor chips with through-electrodes and microbumps, the wiring length between semiconductor chips can be greatly shortened. Therefore, it is possible to reduce the wiring ...
Claims
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IPC IPC(8): H01L25/065H01L21/60
CPCH01L24/10H01L25/0657H01L2224/12105H01L2224/11005H01L24/11H01L24/13H01L2224/05655H01L2224/11334H01L2224/1146H01L2224/1181H01L2224/11849H01L2224/13017H01L2224/13022H01L2224/13083H01L2224/16148H01L2224/1184H01L2224/0401H01L2224/13111H01L2224/13139H01L2224/13147H01L24/81H01L2224/81065H01L2224/81047H01L2224/81035H01L2224/81014H01L2224/81048H01L2224/81815H01L2224/81143H01L25/50H01L2225/06541H01L2225/06513H01L2225/06565H01L2225/06517H01L2924/00014H01L2924/01015H01L2924/00012H01L2924/01047H01L2924/014H01L2924/01029H01L2924/01083H01L21/563H01L23/49811H01L21/67121H01L24/95H01L2224/81002H01L2224/81022H01L2224/95146
Inventor 折笠诚清家英之堀川雄平阿部寿之
Owner TDK CORPARATION