SiC Mosfet electrical performance test device

A technology for testing device and electrical performance, applied in the direction of measuring device, measuring electricity, measuring electrical variables, etc., can solve the problem of not detecting the relationship between voltage, current and mechanical pressure, temperature, etc.

Inactive Publication Date: 2018-09-21
CHONGQING UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing SiC Mosfet voltage and current tests are all measured under normal pressure and temperature, and the relationship between the voltage and current of the device under mechanical pressure and temperature conditions, mechanical pressure and temperature has not been tested.

Method used

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  • SiC Mosfet electrical performance test device
  • SiC Mosfet electrical performance test device
  • SiC Mosfet electrical performance test device

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Embodiment Construction

[0031] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

[0032] The present invention includes mechanical pressure equipment, temperature control box, voltage detector, current detector and controller. The temperature sensor, voltage detector, and current detector in the control box are respectively connected to the controller through data lines; the controller includes a memory, a processor, and a computer program stored in the memory that can run on the processor, and the computer program includes a main program and three subroutines.

[0033] figure 1 The flow of the main program shown is as follows. The flow starts from step S01, and the variable is initialized in step S01, which is 0 by default, and then:

[0034] In step S02, detect whether there is an instruction input, if so, execute step S03; otherwise, execute step S09;

[0035] In step S03, it is judged whether to test under the mechanical pressure co...

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PUM

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Abstract

The invention discloses a SiC Mosfet electrical performance test device. The device comprises a mechanical pressure device, a temperature control box, a voltage detector, a current detector and a controller; the controller comprises a memory, a processor and a computer program which is stored on the memory and can operate on the processor. The processor can realize the following steps when executing the program: step 1, performing a test under a mechanical pressure condition so as to confirm whether to exit the test; step 2, performing a test under a temperature condition to confirm whether toexit the test; step 3, performing voltage and current tests under the mechanical pressure condition and the temperature condition to confirm whether to exit the tests; and repeating the above steps and manually controlling the program to terminate. With the SiC Mosfet electrical performance test device of the invention adopted, the voltage and current of a SiC Mosfet device under the mechanical pressure condition and the temperature condition can be tested; and relationships between the voltage and current on the SiC Mosfet device and mechanical pressure and temperature can be constructed.

Description

technical field [0001] The invention belongs to the technical field of component testing, and in particular relates to a testing device for SiC Mosfet electrical properties. Background technique [0002] SiC Mosfet is a basic electronic component, and testing its electrical performance is a basic work. The existing SiC Mosfet voltage and current tests are all measured under normal pressure and temperature, and the relationship between the voltage and current of the device under mechanical pressure and temperature conditions and the change of mechanical pressure and temperature has not been tested. Contents of the invention [0003] Aiming at the shortcomings of the existing SiC Mosfet testing technology, the technical problem to be solved by the present invention is to provide a test device for the electrical properties of SiC Mosfet, which can test the voltage and current of SiC Mosfet devices under mechanical pressure and temperature conditions, and construct SiC Mosfet....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/00G01R19/00
CPCG01R19/00G01R31/00
Inventor 陈显平李现兵张朋叶怀宇钱靖张国旗周强
Owner CHONGQING UNIV
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