Photodetector and method of making the same
A technology of photodetector and manufacturing method, which is applied in the field of photoelectric detection, can solve the problems of limited detection spectral range, etc., and achieve the effect of increasing the number of layers, increasing the area, and improving the responsivity
Active Publication Date: 2019-08-23
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
However, due to the limitations of its detection principle, the enhancement of responsivity only occurs in the band that resonates with quantum dots, that is, the detection spectral range is extremely limited
Method used
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[0092] 1. Cleaning: provide such as figure 2 The substrate 2 shown is made of silicon; before entering the epitaxy chamber, the surface of the substrate is first cleaned, and the silicon wafer is rinsed in the APM solution of the Seven Star cleaning tank for 10 minutes to remove the surface particles of the silicon wafer. Then rinse with deionized water for 5min and dry; then use LamResearch203 single-chip cleaning equipment, in dilute HF solution (HF:H 2 O=1:100), wash for 120s.
[0093]2. Growth of Si / SiGe stacked three-dimensional structure: Send the cleaned chip into the epitaxial reaction chamber of ASM E2000plus decompression chemical vapor deposition equipment (reduce dpressure-chemical vapor deposition, RPCVD) for epitaxial growth. In the environment of the decompression epitaxy reaction chamber, the silicon wafer is first baked in a hydrogen environment at a high temperature for 20 minutes, in order to remove the natural oxide layer that may remain on the surface. ...
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The invention provides a photoelectric detector and a manufacturing method thereof. The photoelectric detector comprises a substrate, at least one first semiconductor layer, a plurality of dielectriclayers, a plurality of second semiconductor layers, a first electrode and two second electrodes. The first semiconductor layer is arranged on a part of surface of the substrate; a micro-cavity is arranged between the first semiconductor layer and the substrate, and / or a micro-cavity is arranged between adjacent first semiconductor layers; one dielectric layer is arranged on the surface, away fromthe substrate, of a first top semiconductor layer and the surface of the substrate at the two sides of the first semiconductor layer; the other dielectric layers are arranged in the micro-cavity andon the surface of the substrate, and / or the other dielectric layers are arranged in the micro-cavity and on the surface of the first semiconductor layer; the plurality of second semiconductor layers are arranged on the surfaces, away from the first semiconductor layer or away from the substrate, of the dielectric layers in a one-to-one correspondence manner; the second semiconductor layers are two-dimensional semiconductor material layers; the first electrode is arranged on the surface of the substrate; and the two second electrodes are arranged on the surface, away from the dielectric layer,of a second top semiconductor layer. The photoelectric detector is high in response.
Description
technical field [0001] The present application relates to the field of photodetection, in particular, to a photodetector and a manufacturing method thereof. Background technique [0002] Metal-two-dimensional semiconductor material-metal photodetectors are the earliest researched type of photodetectors in two-dimensional semiconductor materials. The two-dimensional semiconductor material connects the source terminal and the drain terminal and acts as a channel. This type of detector borrows from the traditional FET structure, and has the advantage of having a wide spectral response, and the response current can be adjusted by adjusting the gate voltage. [0003] The working principle of the above-mentioned metal-two-dimensional semiconductor material-metal type photodetector: when incident light is irradiated on the surface of the two-dimensional semiconductor material, after the photogenerated carriers in the two-dimensional semiconductor material are generated, they are a...
Claims
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IPC IPC(8): H01L31/113H01L31/0352H01L31/18
CPCH01L31/035281H01L31/1136H01L31/18H01L31/1804Y02P70/50
Inventor 张兆浩张青竹殷华湘徐忍忍
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI