Read error processing method and device based on nand flash
A processing method and read error technology, which is applied in the field of read error processing based on NANDflash, can solve the problem of waste of data block storage space and achieve the effect of solving the waste of storage space
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Embodiment 1
[0015] figure 1 It is a flowchart of a NAND flash-based read error processing method provided in Embodiment 1 of the present invention. This embodiment is applicable to the situation of reading error processing based on NAND flash, and is applied to a NAND flash storage device. The method can be performed by a device having a read error processing function of NAND flash, and the device can use software and / or hardware way to achieve. The method specifically includes:
[0016] S110. When a read error occurs in the target data block, record the position of the data page where the read error occurs in the target data block.
[0017] Specifically, the NAND flash memory is a kind of flash memory and belongs to a non-volatile storage device. The main function of the storage device is to store programs and various data, and to complete the program or data access at high speed and automatically during the operation of the computer. The NAND flash storage device includes at least o...
Embodiment 2
[0025] figure 2 It is a flow chart of a NAND flash-based read error processing method provided by Embodiment 2 of the present invention. This embodiment is optimized on the basis of the above embodiments. The method also includes "when the write operation to the target data block occurs , write invalid data in the data page corresponding to the location". Specifically include the following steps:
[0026] S210. When a read error occurs in the target data block, record the position of the data page where the read error occurs in the target data block.
[0027] S220. Accumulate the number of read error pages of the target data block, and judge whether the number of read error pages exceeds a preset threshold.
[0028] S230. When it is determined that the number of read error pages exceeds the preset threshold, mark the target data block as a bad block.
[0029] S240. When a write operation to a data page of the target data block occurs, write invalid data into the data page ...
Embodiment 3
[0033] image 3 It is a schematic structural diagram of a NAND flash-based read error processing device provided in Embodiment 3 of the present invention, and the device specifically includes: a location recording module 310 , an accumulation judging module 320 and a bad block marking module 330 .
[0034] The position record module 310 is used for recording the position of the data page where the read error occurs when a read error occurs in the target data block;
[0035] The accumulative judging module 320 is used for accumulating the number of read error pages of the target data block, and judging whether the number of read error pages exceeds a preset threshold;
[0036] The bad block marking module 330 is configured to mark the target data block as a bad block when the accumulation judging module judges that the preset threshold is exceeded.
[0037]Further, the device further includes: an invalid data writing module, configured to write invalid data in the data page co...
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