Method for prolonging Flash abrasion life, control device and storage system

A wear life, relational table technology, applied in the memory system, memory architecture access/allocation, data processing input/output process, etc., can solve the problem of ignoring CBE information and other problems, achieve broad application prospects, delay damage speed, and improve wear and tear effect of life

Active Publication Date: 2018-10-09
南京道熵信息技术有限公司
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Problems solved by technology

[0010] The current status is that these functional modules only use the PE information of the physical block (Flash Blocks) and the hot and cold information (write frequency) of the logical address (LBA) of the user data, while ignoring the CBE of each physical Block / Page information

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  • Method for prolonging Flash abrasion life, control device and storage system
  • Method for prolonging Flash abrasion life, control device and storage system
  • Method for prolonging Flash abrasion life, control device and storage system

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Embodiment Construction

[0048] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0049] Such as image 3 As shown, the embodiment of the present invention discloses a method based on the original bit error rate RBER and the corrected bit error number CBE to improve the wear life of Flash, by adjusting the read level threshold and the update frequency of matching data and the Endurance wear of Flash. To achieve the purpose of prolonging the life of the Flash. On the one hand, this method is: collect the original bit error rate of different Page / Block on each Flash chip, compare the RBER with the historical data, and when it increases to a certain level, start the algorithm for adjusting the threshold value of the Page / Block read level, thereby Lower the RBER. Since the read level threshold affects RBER in turn, forming a closed-loop feedback mechanism, it is said that adjusting the read level threshold through RBER is a fe...

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Abstract

The invention discloses a method for prolonging Flash abrasion life, a control device and a storage system. The method includes the steps that the original error rates RBER and the correction error rates CBE of different Blocks / Pages on all Flash chips are collected; when the RBER is increased to a certain degree, the optimal reading level threshold values of the corresponding Blocks / Pages are calculated and written in the corresponding Flash chips; the vacant Blocks / Pages are classified according to the CBE, the Blocks / Pages with the low CBE are distributed to data with high update frequency,and the Blocks / Pages with high CBE are distributed to data with low update frequency. On one hand, by adjusting the reading level threshold values, the RBER is reduced, on the other hand, the damagespeeds of the blocks can be reduced through the update characteristics of matched data and Endurance abrasion of Flash, and the abrasion life of the Flash is prolonged. The method, the control deviceand the storage system can be applied to multiple fields such as solid state disks, disk arrays, solid state caches, distributed storage systems and big data application, and have wide application prospects.

Description

technical field [0001] The invention belongs to the field of storage technology, and relates to a method, a control device and a storage system for improving the wear life of NAND Flash, and in particular to using the original bit error rate and the error rate after error correction to automatically adapt to the adverse effects caused by Flash wear , by adjusting the read level threshold (feedback strategy) and matching data update characteristics and Flash Endurance wear (feedforward strategy), to achieve the purpose of extending the life of Flash. Background technique [0002] NAND Flash (flash memory) is a non-volatile random access storage medium, based on the floating gate (FloatingGate) transistor design, through the floating gate to latch the charge, the charge is stored in the floating gate, they are in the case of no power supply can still be maintained. NAND Flash chips have been widely used in disk systems, such as solid-state drives (SSD), NVM-e solid-state driv...

Claims

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Application Information

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IPC IPC(8): G06F3/06
CPCG06F3/0616G06F3/0634G06F3/0638G06F3/064G06F3/0649G06F3/0653G06F3/0655G06F3/0679G06F2212/7205G06F12/0246
Inventor 胡晓宇
Owner 南京道熵信息技术有限公司
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