Quasi-nonvolatile memory capable of regulating PN junction based on two-dimensional material and preparation method thereof

Abstract

The invention belongs to the field of micro-nano electronic technology, and is specifically relates to a quasi-nonvolatile memory capable of regulating PN junction based on two-dimensional material and preparation method thereof. The memory comprises a layer of two-dimensional material on the insulating substrate as a charge trapping layer, two other types of two-dimensional materials transferredon the trapping layer, tunneling layer respectively as N region of the PN junction and a flash memory, two-dimensional material stacked on top, and channel layer as P region of the PN junction and a flash memory. According to the quasi-nonvolatile memory capable of regulating PN junction based on two-dimensional material and preparation method thereof, the device can write at the nanosecond leveland the charge retention time is controllable through band designing; By applying a gate voltage to control the turn-on and turn-off of the PN junction, the device can perform ultra-fast writing whenthe PN junction is turned on; By changing the thickness and type of the two materials constituting the PN junction and the ratio of the PN junction area to the insulating layer area, ultra-fast quasi-nonvolatile new memory devices with adjustable retention time can be obtained. The preparation process of the method for the quasi-nonvolatile memory is simple, and the material grown by CVD can be prepared on a large scale.

Description

technical field [0001] The invention belongs to the technical field of micro-nano electronics, and in particular relates to a quasi-nonvolatile memory based on a two-dimensional material adjustable PN junction and a preparation method thereof. Background technique [0002] MOSFET is the most basic unit device in integrated circuits. The progress of technology has made the size of MOSFET transistors shrink and its power density is also increasing; another common device in integrated circuits is floating gate transistors, and floating gate transistors work When writing and erasing at high voltage is required, serious power consumption problems are caused. In order to reduce device power consumption and improve device performance, the concept of semi-floating gate storage technology was first proposed by Fudan University in 2013. The semi-floating gate transistor is a combination of a tunneling field effect transistor and a floating gate device to form a new type of "semi-floa...

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Problems solved by technology

[0004] Then, compared with traditional silicon-based semi-floating gate transistors, how to design a new type of adjustable quasi-nonvolatile memory by adjusting the energy band structure of two-dimensional materials has become a challenge.

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