Exposure photomask and production method thereof as well as graphical method and etching method of photoresist

Abstract

The application relates to an exposure photomask and a production method thereof as well as a graphical method and an etching method of a photoresist. The exposure photomask comprises a photomask substrate, a graphical layer arranged on the photomask substrate as well as a semi-transparent layer arranged on the photomask substrate, wherein the semi-transparent layer is positioned on the edge of the graphical layer. The semi-transparent layer is added at the edge of the graphical layer, i.e., the semi-transparent layer is added between an all-transparent layer and an opaque layer; the semi-transparent layer has certain light transmissivity; in the explosion process, the photoresist positioned below the semi-transparent layer receives illumination with certain intensity, so that part of thephotoresist is partially removed in the developing process, and further a photoresist transition structure is formed between a complete photoresist part and a part where the photoresist is completelyremoved; the thickness of the photoresist transition structure is smaller than that of the complete photoresist part, so that the aim of reducing a slope angle is achieved.

Description

technical field [0001] The present application relates to the technical field of displays, in particular to an exposure mask and a manufacturing method thereof, a patterning method of a photoresist material, and an etching method. Background technique [0002] In the display industry, the Taper angle (slope angle) refers to the inclination angle of the section after the etching process, and is an important parameter value in the etching process. [0003] Such as figure 1 As shown, in the prior art, during the etching process, a patterned photoresist layer 30 is obtained by using a conventional exposure mask 10 to expose and develop the photoresist layer 20 . However, in the actual production process, the photoresist material pattern 30 produced by using a traditional exposure mask has the disadvantage of a relatively large Taper angle (α angle in the figure), such as figure 2 As shown, if the Taper angle is too large, it will cause the cover film layer to break when the f...

AI Technical Summary

Problems solved by technology

However, in the actual production process, the photoresist material pattern 30 produced by using a traditional exposure mask has the disadvantage of a relatively large Taper angle (α angle in the figure), such as figure 2 As shown, if the Taper angle is too large, it will cause the cover film layer to break when the film 40 climbs on the surface of the photoresist material layer 30, thereby affecting the performance of the product.

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