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cu/snse nanocomposite multilayer phase change film and its preparation and application
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A phase change and thin film technology, applied in the field of microelectronics, can solve the problems of low density, slow access speed, and high cost, and achieve the effects of improving thermal stability of amorphous state, reducing power consumption, and increasing reliability
Active Publication Date: 2020-08-25
JIANGSU UNIV OF TECH
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[0002] At present, the main products occupying the semiconductor memory market are dynamic memory (DRAM), static memory (SRAM) and flash memory (FLASH), etc., and they have their own characteristics: DRAM is highly integrated, and it only relies on capacitive charges to store data, requiring timing Refresh and save data, and the access speed is slow; SRAM is a flip-flop composed of multiple transistors as the basic storage circuit, which does not need regular refresh, so the storage speed is fast, but its density is low and the cost is high
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Embodiment 1
[0031] The total thickness of the [Cu(a)nm / SnSe(b)nm]x multilayer composite phase change film prepared in this example is 50nm. The specific material structure is [Cu(5nm) / SnSe(5nm)] 5
[0032] 1. Clean the Si substrate, clean the surface and back, remove dust particles, organic and inorganic impurities;
[0033] a) strong ultrasonic cleaning in acetone solution for 10-15 minutes, and rinse with deionized water;
[0034] b) Strong ultrasonic cleaning in ethanol solution for 10-15 minutes, rinse with deionized water, high-purity N 2 Blow dry the surface and back;
[0035] c) Dry the water vapor in an oven at 200°C for about 40 minutes.
[0036] 2. Prepare [Cu(a) / SnSe(b)]x multilayer composite film by room temperature magnetron sputtering method:
[0037] a) Install the Cu and SnSe sputtering targets, the purity of the target is 99.999% (atomic percentage), and vacuum the background to 1×10 -4 Pa;
[0038] b) Set the sputtering power to 60W;
[0039] c) Using high-purity...
Embodiment 2
[0048] The total thickness of the [Cu(a)nm / SnSe(b)nm]x multilayer composite phase change film prepared in this example is 130nm. The specific material structure is [Cu(5nm) / SnSe(5nm)] 13
[0049] 1. Clean the Si substrate, clean the surface and back, remove dust particles, organic and inorganic impurities;
[0050] a) strong ultrasonic cleaning in acetone solution for 10-15 minutes, and rinse with deionized water;
[0051] b) Strong ultrasonic cleaning in ethanol solution for 10-15 minutes, rinse with deionized water, high-purity N 2 Blow dry the surface and back;
[0052] c) Dry the water vapor in an oven at 200°C for about 40 minutes.
[0053] 2. Prepare [Cu(a) / SnSe(b)]x multilayer composite film by room temperature magnetron sputtering method:
[0054] a) Install the Cu and SnSe sputtering targets, the purity of the target is 99.999% (atomic percentage), and vacuum the background to 1×10 -4 Pa;
[0055] b) Set the sputtering power to 65W;
[0056] c) Using high-puri...
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Abstract
The present invention relates to the technical field of utilization of microelectronics and multilayer phase change thin film materials, in particular to a Cu / SnSe multilayer phase change thin film material and further discloses its preparation method, and the Cu / SnSe multilayer phase change thin film material is used for Application of high-speed, low-power phase-change memory. The multi-layer thin film material of the invention is formed by alternately depositing Cu and SnSe layers by magnetron sputtering and compounding at nanoscale. The multi-layer phase change thin film material made by alternately depositing Cu and SnSe layers by magnetron sputtering has achieved better performance advantages, thus obtaining a kind of resistivity before and after the phase change is large, which is required in the process of SET and RESET. Cu / SnSe nano-composite multilayer with less energy, which greatly reduces the power consumption of PCM devices.
Description
technical field [0001] The invention relates to the technical field of microelectronics, in particular to a Cu / SnSe multilayer phase-change thin film material used for high-speed, low-power phase-change memory and its preparation and application. Background technique [0002] At present, the main products occupying the semiconductor memory market are dynamic memory (DRAM), static memory (SRAM) and flash memory (FLASH), etc., and they have their own characteristics: DRAM is highly integrated, and it only relies on capacitive charges to store data, requiring timing Refresh and save data, and the access speed is slow; SRAM is a flip-flop composed of multiple transistors as the basic storage circuit, which does not need regular refresh, so the storage speed is fast, but its density is low and the cost is high. Since both DRAM and SRAM need to provide power to maintain their storage state when storing information, the stored information will be lost after power failure, which is ...
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