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Edge-firing laser elements with small vertical emission angles

A laser component, vertical emission technology, applied in the direction of laser components, lasers, electrical components, etc., can solve problems such as unfavorable back-end applications

Active Publication Date: 2021-08-03
TRUE LIGHT
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] Generally speaking, the vertical divergence angle (FWHM) of the traditional edge-firing laser diode element often reaches more than 30 degrees, while the horizontal divergence angle is generally less than 20 degrees, and the worse the symmetry of the field type is in the optical efficiency of the fiber. It will appear worse, which is not conducive to back-end applications

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  • Edge-firing laser elements with small vertical emission angles
  • Edge-firing laser elements with small vertical emission angles
  • Edge-firing laser elements with small vertical emission angles

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no. 1 example

[0041]

[0042] Matched by Table 2 Figure 5 It can be seen that, in this embodiment, the lower waveguide layer 391 is located on the lower layer 3021 of the cladding layer, and its material is InGaAsP, and its thickness is 40 nm. The spacer layer 392 is located on the lower waveguide layer 391 and is made of InP with a thickness of 50 nm. The upper waveguide layer 393 is located on the spacer layer 392 and is made of InGaAsP with a thickness of 40 nm. Moreover, the thickness of the extended cladding layer 3022 between the passive waveguide layer 39 and the active layer 303 is 1.4 μm. As for other detailed parameter values ​​of the above-mentioned epitaxial layers of the edge-firing laser diode element, such as how many layer structures are there in each layer material, the proportion of each component, the thickness of each layer, the doping type, the doping concentration, and the used Specific values ​​such as the dopant and the like can be obtained directly from Table ...

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Abstract

The invention discloses a side-firing laser element with a small vertical emission angle, which includes an upper cladding layer, a lower cladding layer and an active layer located therebetween. By interposing a passive waveguide layer in the lower cladding layer, there is an extended lower cladding layer between the passive waveguide layer and the active layer; The n value of the overlay. The light field is induced to extend downward through this passive waveguide layer with a high n value, and the passive waveguide layer and the active layer are separated by extending the lower cladding layer to expand the near-field distribution of the laser light field in the resonant cavity, so it can be A far-field light pattern with a smaller vertical emission angle is obtained.

Description

technical field [0001] The invention relates to a structure of a photoelectric element, in particular to a side-firing laser element designed with an AlInAS epitaxial layer and a stable small vertical emission angle. Background technique [0002] Semiconductor laser (semiconductor laser) or laser diode (laser diode) has the advantages of small size, low power consumption, fast response, impact resistance, long life, high efficiency and low price, so it is widely used in optoelectronic system products, For example: light wave communication, information system, household appliances, precision measurement and optical fiber communication. [0003] see figure 1 and figure 2 , are respectively a perspective view and a side view of a conventional typical edge emitting laser diode element. The edge-emitting laser device includes a semiconductor substrate 901, and a cladding layer 902, a separate confinement hetero-structure (SCH) layer, which are sequentially formed on the semic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343H01S5/20
CPCH01S5/2031H01S5/343
Inventor 潘建宏吴承儒
Owner TRUE LIGHT