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A kind of mercapto-ene nanoimprint photoresist and its use method

A photoresist and ene nano-technology, which is applied in the field of mercapto-ene nanoimprint photoresist, can solve the problems of rubber surface roughening, etc., and achieve low shrinkage, good etch resistance, and good etch resistance Effect

Active Publication Date: 2022-04-05
NANXIONG MATERIAL PRODION BASE OF CHINESE ACADEMY OF SCI GUANGZHOU CHEM +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the presence of the polysiloxane structure makes the imprint resist have excellent etch resistance, for the imprint photoresist containing silicone, when the resist is swept by the oxygen plasma process, the silicon-containing organics will produce solid Silica particles to roughen the rubber surface

Method used

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  • A kind of mercapto-ene nanoimprint photoresist and its use method
  • A kind of mercapto-ene nanoimprint photoresist and its use method
  • A kind of mercapto-ene nanoimprint photoresist and its use method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Embodiment 1 and embodiment 2 are the preparation of calixarene derivatives containing double bonds and calixarene derivatives containing mercapto groups:

[0069] Example 1:

[0070] Preparation of double bond-containing calixarene derivatives (ECD-1) and mercapto-containing calixarene derivatives (TCD-1):

[0071] The synthetic route is:

[0072]

[0073] (1) Synthesis of ECD-1

[0074] Dissolve 4.55g (10mmol) of CD-1 (p-tert-butylcalix[4]arene) in 180ml of dioxane, then add 0.84g (15mmol) of KOH and 4.83g (15mmol) of tetrabutylammonium bromide , stirred at 60°C for 15min, then added 18.25g (50mmol) 3-bromopropene and reacted for 12h. After the reaction, the unreacted 3-bromopropene was distilled off by rotary distillation. The crude product was purified by silica gel column chromatography and dried to obtain 4.84g containing double bond The calixarene derivative ECD-1.

[0075] 1 H NMR (DMSO-d 6 )δ(ppm):1.34(S,12H),3.81(S,8H),4.61(br,8H),5.23-5.32(br,8H),5.9...

Embodiment 2

[0079] Preparation of double bond-containing calixarene derivatives (ECD-2) and mercapto-containing calixarene derivatives (TCD-2):

[0080] The synthetic route is:

[0081]

[0082] (1) Synthesis of CD-2

[0083] Dissolve 2.48g (20mmol) of 2-methylresorcinol and 2.84g (20mmol) of n-nonanal in 60ml of ethanol solution, add 1.02g (4mmol) of iodine as a catalyst, and react at 78°C for 95min, the reaction solution After natural cooling, it was poured into 200ml of a solution in which 1g of sodium thiosulfate was dissolved, filtered, washed with water three times, and then vacuum-dried at 80°C to obtain 4.23g (85%) of a powdery yellow solid product calixarene (CD-2).

[0084] 1 H NMR (DMSO-d 6 )δ(ppm):0.86(t,3H,CH 3 ),1.32(br,12H,(CH 2 ) 6 CH 3 ),1.95(s,3H,Ar-CH 3 ),2.17(br,2H,CHCH 2 ),4.22(t,1H,CHCH 2 ),7.17(s,1H,Ar-H),8.64(s,2H,OH).

[0085] 13 C NMR (DMSO-d 6 ): δ (ppm) = 10.0, 13.9, 22.1, 28.0, 28.8, 28.9, 29.2, 31.3, 33.2, 34.2, 111.6, 120.6, 124.6, 149.1.

...

Embodiment 3

[0095] A mercapto-ene nanoimprint photoresist (imprint RE-1) is obtained by uniformly mixing various combinations according to formula 1. Formula 1 is shown in Table 1.

[0096] Formulation of table 1 mercapto-ene nanoimprint photoresist (formulation 1)

[0097] components parts by mass ECD-1 50 TCD-1 60 Ethylene glycol dimethacrylate 50 Benzophenone 4

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Abstract

The invention belongs to the technical field of ultraviolet nano-imprinting, and discloses a mercapto-ene nano-imprinting photoresist and a use method thereof. The mercapto-ene nanoimprint photoresist includes the following components in parts by weight: 50-100 parts of calixarene derivatives containing double bonds, 50-100 parts of calixarene derivatives containing mercapto groups, and diluent 20-100 parts, 0.1-8 parts of initiator. The mercapto-ene nanoimprint photoresist of the present invention has the characteristics of fast curing rate, excellent oxygen resistance and etching resistance, and the like.

Description

technical field [0001] The invention belongs to the technical field of ultraviolet nanoimprinting, and in particular relates to a mercapto-ene nanoimprinting photoresist and a use method thereof. Background technique [0002] Nanoimprint technology has attracted extensive attention in the field of micro-nano structure manufacturing due to its characteristics of not being limited by the limit of lithography, low manufacturing cost, and high yield. Nano-imprint materials are one of the core technologies of nano-imprint technology, which is the guarantee for the preparation of nanostructures. Free radical nano-imprint materials are currently the most researched and used type of imprint adhesives, and their main components are acrylates. This type of photoresist has a fast curing rate, so it is widely used commercially, such as the Hybrane series of DSM in the United States, the NXR series of Nanonex, the PAK-O1 series of Toyo Gosei, and the AMONIL-MMS4 of AMO GmbH. However, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/027G03F7/00
CPCG03F7/0002G03F7/004G03F7/027
Inventor 庞浩李桃廖兵年福伟黄建恒汪慧怡韦代东蒙业云罗业燊
Owner NANXIONG MATERIAL PRODION BASE OF CHINESE ACADEMY OF SCI GUANGZHOU CHEM
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