Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing semiconductor devices

A semiconductor and sacrificial layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting yield, component damage, etc.

Inactive Publication Date: 2018-11-27
HUAIAN IMAGING DEVICE MFGR CORP
View PDF22 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the bonding process, it is easy to cause damage to the finished parts of the wafer, thus affecting the final yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing semiconductor devices
  • Method for manufacturing semiconductor devices
  • Method for manufacturing semiconductor devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] In the manufacturing process of existing semiconductor devices, it is often necessary to bond two or more wafers, and the corresponding bonding can be performed after the functional structures in the wafers have been manufactured. Taking the back-illuminated image sensor as an example, the structural components for realizing the image sensing function can be fabricated on the wafer first, and then the wafer is bonded to the carrier.

[0013] The inventors of the present application have found that in the bonding process of the above-mentioned wafers, it is generally necessary to arrange a corresponding isolation layer between the wafers that are bonded to each other, and since the bonding is performed after the functional structure of the wafer is manufactured, the application of the isolation layer and / or Or removal of the required processing may cause damage to the existing functional structure of the wafer. For example, after the wafers are bonded to the carrier, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for manufacturing semiconductor devices. The method includes the steps of providing a first wafer, which comprises a substrate and components formed on the substrate;forming a sacrificial layer covering the side walls of the components; forming an isolation layer covering the top surfaces of the components and the sacrificial layer; connecting the first wafer toa second wafer through the isolation layer; mechanically polishing the surface, away from the second wafer, of the substrate to enable the bottom, away from the second wafer, of the isolation layer tobe exposed; removing the isolation layer covering the sacrificial layer, and removing the sacrificial layer.

Description

technical field [0001] The present disclosure relates generally to the field of semiconductors and, in particular, to methods for fabricating semiconductor devices. Background technique [0002] In the manufacturing process of semiconductor devices, it is often necessary to bond two or more wafers together to form more complex structures, such as bonding wafers to carriers in the manufacturing process of back-illuminated image sensors, etc. . During the bonding process, it is easy to cause damage to the finished parts of the wafer, thereby affecting the final yield. Therefore, it is necessary to improve the manufacturing method of semiconductor devices (especially the method for bonding wafers) to reduce damage and improve the quality and yield of semiconductor devices. Contents of the invention [0003] An object of the present disclosure is to provide a novel method for manufacturing a semiconductor device. [0004] According to a first aspect of the present disclosur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/18
CPCH01L21/187
Inventor 林永璨罗加聘刘山黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP