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rl passive equalizer structure and design method for shielded differential TSVs

A design method and technology of through-silicon vias, applied in computer-aided design, instrumentation, calculation, etc., can solve the problem of no passive equalizer, etc., achieve low power consumption, improve transmission quality, and achieve the best quality effect

Active Publication Date: 2022-03-22
HANGZHOU DIANZI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no special passive equalizer for the intersymbol interference problem in shielded differential TSV transmission in high-speed digital signal transmission systems.

Method used

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  • rl passive equalizer structure and design method for shielded differential TSVs
  • rl passive equalizer structure and design method for shielded differential TSVs
  • rl passive equalizer structure and design method for shielded differential TSVs

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Embodiment Construction

[0037] The present invention will be further described below in conjunction with accompanying drawing.

[0038] Figure 1A -B is a top view and a central cross-sectional view of a shielded differential TSV 100 structure disclosed in Chinese Patent No. 105810663A. The shielded differential TSV 100 is located in the silicon substrate, and sequentially includes an inner differential TSV pair and a shielding shell from the inside to the outside. The inner differential through-silicon via pair is composed of two columnar through-silicon vias with the same structure, and is used for the transmission of differential signals between layers in a three-dimensional integrated circuit. The columnar TSVs are composed of a metal inner core 101 and an outer ring oxide layer 102, wherein the metal inner core 101 is used to transmit current, and the outer ring oxide layer 102 is used to isolate DC leakage. The shielding shell is composed of an inner oxide layer 103 , an annular metal inner co...

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Abstract

The invention discloses an RL passive equalizer structure and a design method for shielding differential through-silicon holes. The present invention is composed of a plurality of units; the unit includes a shielded differential through-silicon via located in the silicon substrate, two input ports located in the insulating layer, and an on-chip resistor forming an equalizer in sequence from the silicon substrate to the metal layer, And on-chip capacitors and output ports located on the outermost metal layer; this structure is designed using the idea of ​​a resistance-inductance (Resistance-Inductance, RL) resonant circuit. This structure can effectively solve the problem of intersymbol interference in the digital differential signal transmission system, make the transmission frequency band flat, and effectively improve the transmission quality of high-speed digital signals.

Description

technical field [0001] The invention belongs to the technical field of passive electronic devices, and relates to an RL passive equalizer structure and a design method for differential signal transmission. Background technique [0002] Differential transmission mode has become an important technology of high-speed digital signal transmission system. Differential transmission has a high effective suppression ability to external interference, which can effectively improve the transmission quality of signals. In three-dimensional integrated circuits, the differential transmission structure for through-silicon via technology can effectively improve system integration, reduce energy loss, and improve system stability. In this regard, researchers proposed a ground-signal-signal-ground (G-S-S-G) differential TSV transmission structure to improve the transmission quality of high-speed signals, but this structure cannot eliminate the gap between differential pairs. crosstalk. The ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H7/06G06F30/367G06F30/373H01L23/48
CPCH03H7/06H01L23/481G06F30/367
Inventor 赵文生傅楷徐魁文董林玺王高峰
Owner HANGZHOU DIANZI UNIV