rl passive equalizer structure and design method for shielded differential TSVs
A design method and technology of through-silicon vias, applied in computer-aided design, instrumentation, calculation, etc., can solve the problem of no passive equalizer, etc., achieve low power consumption, improve transmission quality, and achieve the best quality effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0037] The present invention will be further described below in conjunction with accompanying drawing.
[0038] Figure 1A -B is a top view and a central cross-sectional view of a shielded differential TSV 100 structure disclosed in Chinese Patent No. 105810663A. The shielded differential TSV 100 is located in the silicon substrate, and sequentially includes an inner differential TSV pair and a shielding shell from the inside to the outside. The inner differential through-silicon via pair is composed of two columnar through-silicon vias with the same structure, and is used for the transmission of differential signals between layers in a three-dimensional integrated circuit. The columnar TSVs are composed of a metal inner core 101 and an outer ring oxide layer 102, wherein the metal inner core 101 is used to transmit current, and the outer ring oxide layer 102 is used to isolate DC leakage. The shielding shell is composed of an inner oxide layer 103 , an annular metal inner co...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 


