A charge-pump method for calculating stress-induced changes in interface state density in nano-cmos devices
A technology of interface state density and charge pump, which is applied in the direction of measuring electricity, measuring electrical variables, testing a single semiconductor device, etc., can solve problems that affect the accuracy of measurement results, and achieve the effect of promoting the development of research and high accuracy
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[0046] In the present embodiment, the CMOS device parameter used is that L (channel length) is 45nm, W (channel width)=10 μm, T OX (Oxide layer thickness) = 2.6nm, N A (Channel doping) = 1E20 / cm 3 . according to figure 1 As shown in the flow chart, the specific charge pump method for calculating the stress-induced interface state density change in the nanometer CMOS device in this embodiment is as follows:
[0047] 1. In a CMOS device, measure the substrate current I SUB (I CP +I Leakage ) varies with substrate voltage V Base change curve. figure 2 The basic experimental setup of the charge pump test technology implemented in this implementation is given. For a CMOS device, the source, drain and substrate are grounded, and the substrate is connected to an ammeter at the same time to measure the current I from the gate to the substrate. SUB , the gate is connected to a voltage pulse generator. Apply voltage pulses to the grid for fixed-amplitude scanning, keep the pul...
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