Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Inorganic flexible fully transparent perovskite oxide voltage-controlled varactor and preparation method thereof

A perovskite oxide, varactor technology, applied in the direction of variable voltage capacitors, etc., can solve the problem that the substrate is not flexible, the flexible substrate is not resistant to high temperature, and the voltage-controlled varactor cannot have both flexibility and flexibility. Transparency and other issues, to achieve the effect of high light transmittance, excellent tuning rate, and wide application prospects

Active Publication Date: 2020-06-26
NANJING UNIV OF SCI & TECH
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the currently widely used voltage-controlled varactors are fabricated on hard substrates. Although some literatures report flexible voltage-controlled varactors or transparent voltage-controlled varactors, these voltage-controlled varactors cannot be simultaneously Both flexibility and transparency
Traditional flexible substrates are not resistant to high temperature, and high temperature resistant substrates are often not flexible

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Inorganic flexible fully transparent perovskite oxide voltage-controlled varactor and preparation method thereof
  • Inorganic flexible fully transparent perovskite oxide voltage-controlled varactor and preparation method thereof
  • Inorganic flexible fully transparent perovskite oxide voltage-controlled varactor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The specific preparation process of the inorganic flexible fully transparent perovskite oxide voltage-controlled varactor in this embodiment is as follows:

[0028] (1) Put the mica substrate with a thickness of 10 μm into the growth chamber of the sputtering deposition system and evacuate it, then raise the temperature to 300°C, and sputter-deposit Ag and ITO films in sequence. The thickness ratio of Ag:ITO is 1:10, and the layer The number is 2 layers, the total thickness is 150nm;

[0029] (2) (Ag / ITO) prepared in step (1) n The bottom electrode was heated to 650 °C, and Bi was deposited by sputtering 3.25 La 0.75 Ti 3 o 12 (BLT) thin film, thickness is 200nm, after treating that temperature is down to room temperature, take out the deposited BLT thin film;

[0030] (3) Cover the mask with the BLT film prepared in step (2), put it into the growth chamber of the sputtering deposition system and evacuate it, then raise the temperature to 300°C, sputter and deposit...

Embodiment 2

[0033] The specific preparation process of the inorganic flexible fully transparent perovskite oxide voltage-controlled varactor in this embodiment is as follows:

[0034] (1) Put the mica substrate with a thickness of 10 μm into the growth chamber of the sputtering deposition system and evacuate it, then raise the temperature to 300°C, and sputter-deposit Ag and ITO films in sequence. The thickness ratio of Ag:ITO is 1:10, and the layer The number is 2 layers, the total thickness is 250nm;

[0035] (2) (Ag / ITO) prepared in step (1) n The bottom electrode was heated to 650 °C, and Bi was deposited by sputtering 3.25 La 0.75 Ti 3 o 12 (BLT) thin film, thickness is 200nm, after treating that temperature is down to room temperature, take out the deposited BLT thin film;

[0036] (3) Cover the mask with the BLT film prepared in step (2), put it into the growth chamber of the sputtering deposition system and evacuate it, then raise the temperature to 300°C, sputter and deposit...

Embodiment 3

[0039] The specific preparation process of the inorganic flexible fully transparent perovskite oxide voltage-controlled varactor in this embodiment is as follows:

[0040] (1) Put the mica substrate with a thickness of 10 μm into the growth chamber of the sputtering deposition system and evacuate it, then raise the temperature to 300°C, and sputter-deposit Ag and ITO films in sequence. The thickness ratio of Ag:ITO is 1:10, and the layer The number is 5 layers, the total thickness is 150nm;

[0041] (2) (Ag / ITO) prepared in step (1) n The bottom electrode was heated to 650 °C, and Bi was deposited by sputtering 3.25 La 0.75 Ti 3 o 12 (BLT) thin film, thickness is 200nm, after treating that temperature is down to room temperature, take out the deposited BLT thin film;

[0042] (3) Cover the mask with the BLT film prepared in step (2), put it into the growth chamber of the sputtering deposition system and evacuate it, then raise the temperature to 300°C, sputter and deposit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an inorganic flexible perovskite oxide voltage-controlled varactor and a preparation method thereof. The transparent flexible voltage-controlled varactor consists of a mica substrate, a fully transparent layered (Ag / ITO) n bottom electrode, a perovskite oxide film and a transparent ITO top electrode. The voltage-controlled varactor uses mica as the substrate and O2 as the sputtering gas, a sputtering deposition technology is utilized to deposite on the mica a (Ag / ITO) n bottom electrode of a thickness of 150 nm to 250 nm, the perovskite oxide film of a thickness of 200nm, and with the ITO top electrode of a thickness of 100 nm to 300 nm, thereby obtaining the inorganic flexible transparent perovskite oxide voltage-controlled varactor. The voltage-controlled varactor of the invention has excellent tuning rate and high light transmittance; and is flexible and bending-resistant, when the bending radius is 1.4 mm, the tuning rate is close to the numerical value ina flat state, and the varactor have wide application prospects in flexible and transparent electronic devices.

Description

technical field [0001] The invention belongs to the field of electronic information materials and components, and in particular relates to an inorganic flexible fully transparent voltage-controlled varactor and a preparation method thereof. Background technique [0002] With the rapid development of Internet of Things technology and people's increasing attention to health monitoring, wearable electronic devices, including bendable displays, tactile sensors, nanogenerators, and flexible memories, have attracted widespread attention. And more and more manufacturers of electronic products such as Samsung, Sony, Hewlett-Packard, Intel, etc., are also increasingly demanding in the development of flexible electronic products such as flexible displays. The key step for these electronic devices to achieve transparency and flexibility is to realize the transparency and flexibility of components, so the development of flexible and transparent voltage-controlled varactors is an emergin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01G7/06
CPCH01G7/06
Inventor 袁国亮谢忠帅苏留帅
Owner NANJING UNIV OF SCI & TECH
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com