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Low-temperature polysilicon layer, thin film transistor and manufacturing method thereof

A low-temperature polysilicon and thin-film transistor technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as reduced contrast, flicker, and optical display effects of displays

Active Publication Date: 2018-12-18
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In another traditional low-temperature polysilicon technology, the channel of the thin film transistor is likely to cause light-induced leakage current. Excessive leakage current will significantly affect the optical display effect of the display, such as crosstalk, flicker, contrast reduction, etc.

Method used

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  • Low-temperature polysilicon layer, thin film transistor and manufacturing method thereof
  • Low-temperature polysilicon layer, thin film transistor and manufacturing method thereof
  • Low-temperature polysilicon layer, thin film transistor and manufacturing method thereof

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Embodiment Construction

[0042] In order to make the above and other objectives, features, and advantages of the present disclosure more comprehensible, preferred embodiments of the present disclosure will be exemplified below in detail with reference to the attached drawings. Furthermore, the direction terms mentioned in this disclosure, such as up, down, top, bottom, front, back, left, right, inside, outside, side layer, surrounding, center, horizontal, transverse, vertical, longitudinal, axial , radial direction, the uppermost layer or the lowermost layer, etc., are only directions for referring to the attached drawings. Therefore, the directional terms used are used to explain and understand the present disclosure, but not to limit the present disclosure.

[0043] In the figures, structurally similar units are denoted by the same reference numerals.

[0044] refer to figure 1 , an embodiment of the present disclosure provides a method for fabricating a low-temperature polysilicon layer, includin...

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Abstract

A low temperature polysilicon layer, a thin film transistor, and a method of fabricating that same are provided. A low-temperature polysilicon layer comprises a substrate, at least one buff layer anda polysilicon layer. At least one buff layer is arranged on that substrate. A polysilicon layer is disposed on at least one buffer layer. The polysilicon layer includes a channel region, two low dopedregions disposed on both sides of the channel region, and two high doped regions disposed on the outer side of the low doped regions. The thickness of the edge of the channel region and at least a portion of the low doping region is smaller than the thickness of other locations of the polysilicon layer. The present disclosure can reduce the absorption of photons by the low temperature polysiliconlayer and reduce the photogenerated leakage current of the low temperature polysilicon layer.

Description

【Technical field】 [0001] The disclosure relates to the field of display technology, in particular to a low-temperature polysilicon layer, a thin film transistor and a manufacturing method thereof. 【Background technique】 [0002] Low temperature polysilicon (LTPS) technology has high carrier mobility and is widely used in small and medium-sized thin film transistor liquid crystal displays (thin film transistor-liquid crystal display, TFT LCD) with high resolution and active The manufacture of matrix organic light emitting diode (active-matrix organic light emitting diode, AMOLED) panel has broad application prospects. [0003] In traditional low-temperature polysilicon technology, thin film transistors usually include a top gate (top gate) structure and a light shield layer (light shield layer, LS). The number of masks required for production is larger and the product production cycle is longer. [0004] In another traditional low-temperature polysilicon technology, the cha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/336H01L29/786H01L29/10
CPCH01L29/1033H01L29/66757H01L29/786H01L21/02532H01L21/02595H01L29/78696H01L29/78621H01L29/78675H01L21/02422H01L21/02488H01L21/02502H01L29/6675H01L29/78672
Inventor 李立胜何鹏颜源
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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