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Sealing structure and sealing method of through hole, and transfer substrate for sealing through hole

A technology of sealing structure and transfer printing substrate, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc.

Active Publication Date: 2022-03-01
TANAKA PRECIOUS METAL IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, depending on the type of element, even a very small amount of gas components remaining in the sealed space may not be allowed

Method used

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  • Sealing structure and sealing method of through hole, and transfer substrate for sealing through hole
  • Sealing structure and sealing method of through hole, and transfer substrate for sealing through hole
  • Sealing structure and sealing method of through hole, and transfer substrate for sealing through hole

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0062] first embodiment : Hereinafter, preferred embodiments of the present invention will be described. In this embodiment, as the metal powder, metal powder made of gold with a purity of 99.9% is used as the sealing material, and after the production of the transfer substrate and the processing of the base material, sealing of the through-holes of the base material is performed. test.

[0063] (i) Manufacture of transfer substrate

[0064] figure 1 It is a figure explaining the manufacturing process of the transfer board|substrate of this embodiment. First, a substrate made of a silicon wafer was prepared, and protrusions ( figure 1 (a)). The dimensions of the protrusions were cylindrical protrusions with a diameter of 500 μm and a height of 10 μm.

[0065] Next, a titanium thin film was formed as a transfer film (thickness: 0.05 μm) by sputtering on the top surface of the protrusion of the substrate. Next, it was exposed to air at 25°C for 24 hours to form an oxid...

no. 2 approach

[0077] second embodiment : Here, with regard to the same base material (sealed space) as in the first embodiment, the effects of the difference in the structural material of the sealing material and the presence or absence of the base metal film and the cap metal film were examined. In the first embodiment, the solvent and the metal content of the metal paste were the same, but the particle size and type of the metal powder were changed to produce a transfer substrate. Then, similarly to the first embodiment, a silicon wafer (upper base material) and a glass wafer (lower base material) are bonded to form a sealed space, and the through-holes thereof are sealed. In some tests, a low load of 70 MPa was used as the pressure on the top surface of the protrusion. Table 1 shows the structures of various sealing structures trial-produced in this embodiment and the results of leak tests.

[0078] [Table 1]

[0079]

[0080] According to Table 1, good airtight sealing characteri...

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Abstract

The present invention relates to a sealing structure, comprising a group of base materials forming a sealed space, a through hole formed in at least one of the base materials and communicating with the sealed space, and a sealing member sealing the through hole. In the present invention, a base metal film made of a bulk metal such as gold is provided on the surface of the base material on which the through-holes are formed. In addition, the sealing member is bonded to the base metal film and seals the through hole, and the sealing member is composed of a sealing material and a cap metal film, and the sealing material is bonded to the base metal film and is made of a metal such as gold with a purity of 99.9% by mass or more. It is composed of a compressed body of powder, and the lid-shaped metal film is bonded to a sealing material and is composed of a bulk metal such as gold. In addition, the sealing material is composed of a densified region on the outer peripheral side in contact with the base metal film and a porous region on the central side in contact with the through-hole. The porosity of any cross section of the densified region is 10% or less in terms of area ratio.

Description

technical field [0001] The present invention relates to a sealing structure suitable for packaging components requiring hermetic sealing such as MEMS devices or semiconductor devices. Specifically, it relates to a structure for sealing the sealed space by closing the through-hole in a base material provided with a through-hole communicating with the sealed space in which a component is mounted. Background technique [0002] MEMS (Micro Electro Mechanical Systems) devices such as pressure sensors and acceleration sensors and various semiconductor devices are used in a packaged state to prevent oxidation and deterioration of elements caused by moisture and oxygen in the air. As a manufacturing process of the package mentioned above, the cap which becomes a cover body is laminated|stacked on the base body to which the element was fixed, and both are bonded, and hermetic sealing is performed. The brazing filler metal is thermally bonded to the cap in advance, and the brazing fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/02H01L23/10
CPCH01L23/02H01L23/10H01L21/50H01L2221/68304H01L21/6835H01L2221/68363H01L23/04H01L23/13H01L23/29H01L21/4817
Inventor 小柏俊典佐佐木裕矢宫入正幸
Owner TANAKA PRECIOUS METAL IND