Sapphire crystal growth furnace crucible fixing apparatus
A sapphire crystal and fixing device technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of inconvenient crucible installation and disassembly, prolonging the sapphire growth period, unable to guarantee the growth furnace, etc., and achieves good fixing effect, Conducive to promotion, easy disassembly and installation
Active Publication Date: 2019-01-01
TDG YINXIA NEW MATERIAL CO LTD
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Problems solved by technology
[0004] When cultivating sapphire crystals, the crucible needs to be fixed. The existing fixing devices on the market generally have poor structural stability, which is not convenient for the installation and disassembly of the crucible, and cannot guarantee that the growth furnace is in a vacuum state. It can fix a crucible, which greatly prolongs the growth cycle of cultivating sapphire, so it is not conducive to popularization
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[0023] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.
[0024] refer to Figure 1-4 , a crucible fixing device for a sapphire crystal growth furnace, comprising a first crucible 11 and a plurality of second crucibles 22, and the first crucible 11 and the second crucible 22 are arranged at different heights inside the furnace body 4, the first crucible 11 and the second crucible The upper ends of both sides of the second crucible 22 are welded with connecting blocks 10, and the plurality of connecting blocks 10 are set in the same way. The setting of the connecting blocks 10 can make it more convenient for the operator to take out the crucible through the equipment, and through this design , can make the device capable of ...
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The invention relates to the technical field of sapphire crystal growth apparatuses, in particular to a sapphire crystal growth furnace crucible fixing apparatus. The sapphire crystal growth furnace crucible fixing apparatus comprises a first crucible and a plurality of second crucibles, wherein the lower end of a furnace body is provided with a supporting table, the middle part of the upper end of the supporting table is provided with a circular groove, a plurality of groups of pre-tightening mechanisms are arranged between a cover body and the upper end of the supporting table, an annular plate is welded on the outer side of the first crucible, the upper end of the inner side of the furnace body is provided with two groups of buckling mechanisms, a supporting plate is welded on the lowerend of the inner side of the furnace body, four second crucibles penetrating through the supporting plate are uniformly arranged on the supporting plate, a limiting plate is welded on each second crucible, the limiting plates on two sides of the second crucibles are respectively provided with two groups of rotating mechanisms, a telescopic mechanism is respectively arranged between each rotatingmechanism and the inner side bottom of the furnace body, and the middle part of one side of the furnace body is also provided with a gas absorption mechanism. The sapphire crystal growth furnace crucible fixing apparatus is stable in structure, capable of simultaneously fixing a plurality of crucibles, and convenient in operation.
Description
technical field [0001] The invention relates to the technical field of sapphire crystal growth devices, in particular to a crucible fixing device for a sapphire crystal growth furnace. Background technique [0002] The melting point of sapphire crystal is as high as 2050°C, and the Mohs hardness is 9, second only to diamond. Therefore, the crystal growth and processing technology is very difficult. Only a few countries in the world can produce sapphire crystal that meets the quality and size requirements of the substrate. [0003] At present, the growth technologies of sapphire crystal mainly include flame method, pulling method, guided mode method, heat exchange method, Kyropoulos method, temperature gradient method and descending method growth technology. Flame grown sapphire crystals have serious body defects such as inlays and bubbles, which cannot meet the requirements of optical quality. The sapphire crystal grown by the pulling method has the disadvantages of large t...
Claims
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Login to View More IPC IPC(8): C30B29/20C30B35/00
CPCC30B29/20C30B35/00
Inventor 丁钰明石天虎段斌斌康森常慧朱泾伟王国强
Owner TDG YINXIA NEW MATERIAL CO LTD