A transient voltage suppressor and a manufacturing method thereof

A technology of transient voltage suppression and manufacturing method, which is applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of wasting chip area, unfavorable cost, saving, etc., and achieve the effect of cost saving and convenient protection

Inactive Publication Date: 2019-01-04
SHENGSHIYAOLAN SHENZHEN TECH CO LTD
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing transient voltage suppressors are usually used to protect sensitive circuits from surges, but at present, when multiple different circuits need to be protected, multiple different transient voltage suppressors need to be used for protection, so that The area of ​​the chip is wasted, which is not conducive to cost saving, so it cannot meet the needs of the market

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A transient voltage suppressor and a manufacturing method thereof
  • A transient voltage suppressor and a manufacturing method thereof
  • A transient voltage suppressor and a manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described implementation Examples are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0015] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, or the orientation or posi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a transient voltage suppressor, comprising: a substrate; A first injection region of a second conductivity type formed in a surface region of the substrate; A first epitaxiallayer formed on the substrate; A second epitaxial layer of a first conductivity type formed on the first epitaxial layer; A first trench formed in the second epitaxial layer and positioned above the first portion, and a second trench formed in the second epitaxial layer and positioned above the second portion, the first trench and the second trench penetrating the second epitaxial layer; A third epitaxial layer of a first conductivity type and a fourth epitaxial layer of a first conductivity type respectively formed in the first trench and the second trench, the third epitaxial layer is connected to the first portion and has a height smaller than a depth of the first trench, and the fourth epitaxial layer is connected to the second portion and has a height smaller than a depth of the second trench; and a second implantation region formed in the upper surface region of the fourth epitaxial layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a transient voltage suppressor and a manufacturing method thereof. Background technique [0002] Transient voltage suppressor is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, small leakage current and High reliability and other advantages, so it has been widely used in voltage transient and surge protection. Existing transient voltage suppressors are usually used to protect sensitive circuits from surges, but at present, when multiple different circuits need to be protected, multiple different transient voltage suppressors need to be used for protection, so that The area of ​​the chip is wasted, which is not conducive to cost saving, so it cannot meet the demand of the market. Contents of the invention [0003] The embodi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L29/73H01L29/06H01L27/02
CPCH01L27/0259H01L27/0296H01L29/0603H01L29/0684H01L29/66234H01L29/73
Inventor 不公告发明人
Owner SHENGSHIYAOLAN SHENZHEN TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap