6-inch patterned sapphire substrate, preparation method and LED epitaxial wafer

A patterned sapphire and sapphire substrate technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of increased process difficulty and single microstructure schematic diagram, so as to improve wavelength uniformity, eliminate stress accumulation effect, The effect of increasing the window

Inactive Publication Date: 2019-01-04
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, the sapphire patterned substrate solutions that have been mass-produced have a single pattern in their microstructure. With the increase of bottom size, the process difficulty of epitaxial growth increases, and there are higher requirements for equipment and materials

Method used

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  • 6-inch patterned sapphire substrate, preparation method and LED epitaxial wafer
  • 6-inch patterned sapphire substrate, preparation method and LED epitaxial wafer
  • 6-inch patterned sapphire substrate, preparation method and LED epitaxial wafer

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Embodiment Construction

[0033] Certain terms are used, for example, in the description and claims to refer to particular components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. As mentioned throughout the specification and claims, "comprising" is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve the technical problem within a certain error range and basically achieve the technical effect. In addition, the term "coupled" herein includes any direct and indirect electrical coupling means. Therefore, if it is described that a first device is coupled to a second device, it means that the first device may be directly elect...

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Abstract

A 6-inch patterned sapphire substrate and preparation method thereof and an LED epitaxial wafer are provided, which relate to the technical field of LEDs, the method comprising providing a sapphire substrate; Coating a layer of photoresist on the surface of the sapphire substrate; Exposing and developing a sapphire substrate coated with a photoresist to form a patterned mask layer, the patterned mask layer comprising a plurality of columnar photoresistance separated by dividing channels; Feeding a sapphire substrate with a patterned mask layer into a reaction chamber of an etching table for dry etching, a patterned structure is formed on the surface of the sapphire substrate to form a patterned sapphire substrate. The patterned structure comprises a plurality of U-shaped grooves and a plurality of triangular cone-shaped protrusion structures. The U-shaped grooves divide the triangular cone-shaped protrusion structures into a plurality of independent block units, and a plurality of triangular cone-shaped protrusion structures are respectively included in each block unit. So it is beneficial to improve the epitaxy quality and the yield of fabrication.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to a patterned sapphire substrate, a preparation method and an LED epitaxial wafer. Background technique [0002] At present, LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Its advantages such as small size, low power consumption, long service life, high brightness, environmental protection, and durability are recognized by consumers, and the scale of domestic production of LEDs is gradually expanding. ;The demand for LED brightness and luminous efficiency is increasing day by day in the market. What customers are concerned about is that LEDs are more power-saving, have higher brightness and better luminous efficiency, which puts forward higher requirements for LED epitaxial growth; how to grow better epitaxial wafers It has been paid more and more attention because the performance of LED devices can be improved due to the improvement of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/12
CPCH01L33/007H01L33/12
Inventor 徐平冯磊
Owner XIANGNENG HUALEI OPTOELECTRONICS
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