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led epitaxial growth method

An epitaxial growth and reaction chamber technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of large warpage of epitaxial wafers, uneven growth of intra-chip materials, low product yield and luminous efficiency, etc. Improve performance, improve LED luminous efficiency and antistatic ability, and improve the effect of external quantum efficiency

Active Publication Date: 2021-06-01
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the existing epitaxial growth technology, there is a common problem of large warping of the epitaxial wafer, especially when the epitaxial crystal is grown on a 4-inch sapphire substrate, due to the polarization field generated during the epitaxial growth process and the uneven growth of materials in the wafer, etc. , making the warpage of the epitaxial wafer larger, and the product yield and luminous efficiency lower

Method used

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Embodiment 1

[0048] The invention uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate 1 is (001) plane sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0049] A kind of LED epitaxial growth method, see figure 1 , including in turn: processing substrate 1, growing GaN low-temperature buffer layer 2, growing undoped GaN layer 3, growing Si-doped N-type GaN layer 4, growing light-emitting layer 5, growing P-type AlGaN layer 6, growing doped Mg P-type GaN layer 7, cooling down, ...

Embodiment 2

[0060] The application examples of the LED epitaxial growth method of the present invention are provided below, and its epitaxial structure can be found in figure 1 . Using MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate 1 is (0001) plane sapphire, and the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows:

[0061] Step 101, processing the substrate 1:

[0062] H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-30...

Embodiment 3

[0086] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0087] The growth method of conventional LED epitaxy is (see the epitaxial layer structure figure 2 ):

[0088] 1. H at 1000°C-1100°C 2 Under the atmosphere, feed 100L / min-130L / min of H 2 , keep the reaction chamber pressure at 100mbar-300mbar, and process the thickness of the sapphire substrate 1 at 8min-10min.

[0089] 2. Lower the temperature to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed the flow rate at 10000sccm-20000sccm NH 3 , 50sccm-100sccm TMGa, 100L / min-130L / min H 2 , grow a GaN low-temperature buffer layer 2 with a thickness of 20nm-40nm on the sapphire substrate 1 .

[0090] 3. Raise the temperature to 1000°C-1200°C, keep the pressure in the reaction chamber at 300mbar-600mbar, and feed NH with a flow rate of 30000sccm-40000sccm 3 , 200sccm-400sccm TMGa, 100L / min-130L / min H 2 1. Continuously growing the u...

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Abstract

The present application discloses an LED epitaxial growth method, which sequentially includes: processing the substrate, growing a GaN low-temperature buffer layer, growing an undoped GaN layer, growing an N-type GaN layer doped with Si, growing a light-emitting layer, and growing a P-type AlGaN layer 1. Growing a P-type GaN layer doped with Mg, growing an InGaN / SiGaN superlattice layer, and cooling down. In this way, after growing the Mg-doped P-type GaN layer, the warpage of the epitaxial wafer can be reduced by introducing the InGaN / SiGaN superlattice layer, which is conducive to improving the yield of GaN epitaxial wafers, and improving LED luminous efficiency and resistance electrostatic capacity.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, and in particular, relates to an LED epitaxial growth method. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a kind of solid-state lighting. Due to the advantages of LED, such as small size, low power consumption, long service life, high brightness, environmental protection, and durability, it is recognized by consumers, and the scale of domestic LED production is also increasing. Gradually expand. [0003] In the existing epitaxial growth technology, there is a common problem of large warping of the epitaxial wafer, especially when the epitaxial crystal is grown on a 4-inch sapphire substrate, due to the polarization field generated during the epitaxial growth process and the uneven growth of materials in the wafer, etc. , making the warpage of the epitaxial wafer larger, and the product yield and luminous efficiency lower. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/04H01L33/12
Inventor 徐平冯磊王杰
Owner XIANGNENG HUALEI OPTOELECTRONICS
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