The invention provides a manufacturing method of a
semiconductor device, and relates to the technical field of semiconductors. The method comprises the steps that a
semiconductor substrate is provided, a first
dielectric layer is formed on the surface of the
semiconductor substrate, and a patterned
mask layer is formed on the first
dielectric layer; a
deep trench arranged in the semiconductor substrate is formed; a second
dielectric layer is formed on the bottom part and the side wall of the
deep trench; a first polysilicon layer is formed through deposition to fill in the
deep trench; the first time of
etching is performed to etch and remove partial first polysilicon layer, wherein the top surface of the remaining first polysilicon layer is higher than the top surface of the first
dielectric layer and lower than the top surface of the
mask layer; the
mask layer is removed; the second time of
etching is performed to etch and remove the first polysilicon layer; and the top polar plate of the deep trench
capacitor is formed. According to the method,
etching damage to other film
layers or materials which are arranged at the external side of the deep trench and have the same material with that of the
mask layer in the removing process of the
mask layer can be effectively avoided and the window of the
mask layer removing process can be expanded.