Growth method for epitaxial structure of LED

A growth method and epitaxial structure technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low radiation recombination efficiency of quantum wells and low quality of quantum well growth, so as to improve external quantum efficiency, increase luminous efficiency, and improve The effect of product yield

Active Publication Date: 2019-03-01
XIANGNENG HUALEI OPTOELECTRONICS
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Problems solved by technology

[0005] The invention solves the problems of low quantum well growth quality and low quantum well radiation recombination efficiency existing in the existing LED epitaxial growth method by adopting pretreatment and high temperature treatment methods in the growth process of the multi-quantum well layer, thereby improving LED The luminous efficiency, and reduce the epitaxial wafer warpage, improve product yield

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  • Growth method for epitaxial structure of LED
  • Growth method for epitaxial structure of LED

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Embodiment 1

[0039] This embodiment adopts the LED epitaxial structure growth method provided by the present invention, adopts MOCVD to grow high-brightness GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0040] A method for growing an LED epitaxial structure, which sequentially includes: processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing...

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Abstract

The invention discloses a growth method for an epitaxial structure of an LED. The method sequentially comprises the following steps of treating a substrate, growing a low temperature buffer layer GaN,growing a non-doped GaN layer, growing an Si-doped N-type GaN layer, growing a multi-quantum-well layer, growing an AlGaN electronic barrier layer, growing an Mg-doped P-type GaN layer and cooling, wherein growing the multi-quantum-well layer sequentially comprises the following steps of pretreating, growing an Iny1Ga(1-yL)N layer, growing an Iny2Ga(1-y2)N layer, carrying out high-temperature treatment and growing a GaN layer. The method solves the problems that the growth quality of a quantum well is poor and the radiative recombination efficiency of the quantum well is low in an existing epitaxial growth method for the LED, so that the luminous efficiency of the LED is improved, the warping of an epitaxial wafer is reduced, and the yield of products is improved.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to a method for growing an LED epitaxial structure. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When current flows, electrons and holes recombine in their quantum wells to emit monochromatic light. As a high-efficiency, environmentally friendly, and green new solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] In the current traditional LED epitaxy InGaN / GaN multi-quantum well layer growth method, the quality of the InGaN / GaN multi-quantum well layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/32H01L21/67
CPCH01L21/67253H01L33/007H01L33/06H01L33/32
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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