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4 inch led epitaxial growth method

A technology of epitaxial growth and growth temperature, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problem of low crystal quality and light output power of the epitaxial layer, low product yield, low luminous efficiency, etc. Problems, achieve the effect of improving LED luminous efficiency and antistatic ability, improving external quantum efficiency, and improving performance

Active Publication Date: 2020-01-31
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After the LED size is upgraded to 4 inches, LEDs generally have technical problems such as large warping of epitaxial wafers and low luminous efficiency. Therefore, how to grow better epitaxial wafers has attracted increasing attention.
[0003] In the existing epitaxial growth technology, there is a common problem of large warping of the epitaxial wafer, especially when the epitaxial crystal is grown on a 4-inch sapphire substrate, due to problems such as lattice mismatch and uneven distribution of indium, the crystal quality of the epitaxial layer And the light output power is low, resulting in large warpage of the epitaxial wafer, low product yield and low luminous efficiency

Method used

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  • 4 inch led epitaxial growth method
  • 4 inch led epitaxial growth method
  • 4 inch led epitaxial growth method

Examples

Experimental program
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Effect test

Embodiment 1

[0053] figure 1 Shown is a schematic structural diagram of the LED epitaxial layer 100 in the prior art. The LED epitaxial layer 100 in the prior art includes: a substrate 1, a low temperature buffer layer 2, an undoped GaN layer 3, and Si-doped n-type GaN layer 4, active layer MOW 5, P-type AlGaN layer 6, magnesium-doped P-type GaN layer 7; wherein, the active layer MOW 5 includes In y1 Ga (1-y1) N layer 51 and GaN layer 52 .

[0054] figure 2 Shown is a flow chart of a 4-inch LED epitaxial growth method provided by the embodiment of the present application, image 3 Shown is a schematic structural diagram of the LED epitaxial layer 200 in the embodiment of the present application. Please refer to figure 2 and image 3 , an embodiment of the present application provides a 4-inch LED epitaxial growth method, including:

[0055] Step 101, processing the substrate 10;

[0056] Step 102, growing the low temperature buffer layer 20;

[0057] Step 103, growing the undoped...

Embodiment 2

[0087] In the prior art, the LED epitaxial layer growth method includes: processing a substrate 1, growing a low temperature buffer layer 2, growing an undoped GaN layer 3, growing a Si-doped n-type GaN layer 4, growing an active layer MOW5, growing a P-type layer AlGaN layer 6, growth of magnesium-doped P-type GaN layer 7, for the epitaxial layer structure, please refer to figure 1 . The embodiments of the present application add Al on the basis of the prior art x Ga 1-x N / In y Ga 1-yN superlattice layer 50 . In this embodiment, 1000 pieces of sample 1 are prepared according to the LED epitaxial growth method in the prior art, and 1000 pieces of sample 2 are prepared according to the LED epitaxial growth method of the present application. After the samples were grown, 4 samples of Sample 1 and Sample 2 were randomly selected, and the XRD102 surface of the epitaxial wafer was tested under the same conditions. Please refer to Table 1. Table 1 shows the epitaxial XRD test ...

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Abstract

The invention discloses a 4-inch LED epitaxial growth method, and relates to the technical field of LEDs. The 4-inch LED epitaxial growth method comprises: processing a substrate, growing a low temperature buffer layer, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, and growing a AlxGa1-xN / InyGa1-yN superlattice layer, growing an active layer MOW, growing a P-type AlGaN layer,growing a Mg-doped P-type GaN layer, and performing cooling. The AlxGa1-xN / InyGa1-yN superlattice layer is introduced, which is beneficial to eliminating a stress accumulation effect of a 4-inch sapphire substrate on a GaN film, and significantly increases the stress control window of an epitaxial film material, thereby reducing the warpage of the epitaxial wafer, is beneficial to improving the yield of GaN epitaxial wafers, and improves the luminous efficiency and antistatic ability of LEDs.

Description

technical field [0001] The present invention relates to the technical field of LEDs, and more particularly, to a 4-inch LED epitaxial growth method. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Because LED has the advantages of small size, low power consumption, long service life, high brightness, environmental protection, and durability, it is recognized by consumers. The scale of domestic production of LED is also It has gradually expanded, and the size of LEDs produced by most manufacturers has been upgraded from 2 inches to 4 inches. After the LED size is upgraded to 4 inches, LEDs generally have technical problems such as large warpage of epitaxial wafers and low luminous efficiency. Therefore, how to grow better epitaxial wafers has received increasing attention. [0003] The problem of large warpage of epitaxial wafers generally exists in the existing epitaxial growth technology, especially when epi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L21/02H01L21/67H01L33/06H01L33/12H01L33/32H01L23/60
CPCH01L21/0254H01L21/02576H01L21/02634H01L21/67253H01L23/60H01L33/007H01L33/06H01L33/12H01L33/325
Inventor 徐平季辉吴奇峰
Owner XIANGNENG HUALEI OPTOELECTRONICS
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