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led epitaxial wafer growth method

A technology of LED epitaxial wafers and growth methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of high chip grinding fragmentation rate, large warping of epitaxial wafers, and low product yield, and achieve surface hexagonal defects and concave shapes. The effect of fewer pits, improved crystal quality, and improved pass rate

Active Publication Date: 2020-10-09
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the low-temperature buffer layer is still hetero-epitaxy, its improved crystal quality is limited.
In addition, due to the large lattice mismatch between the epitaxial film layers, the epitaxial crystal film has been subjected to stress during the growth process, resulting in bending and warping of the epitaxial film.
When the traditional low-temperature buffer layer method is used to grow epitaxial crystals on large-size sapphire substrates, the warpage of the epitaxial wafers is large, resulting in a high rate of grinding fragments and low product yields in the subsequent chip manufacturing process

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specific Embodiment

[0039] see figure 1 Shown is a specific embodiment of the LED epitaxial wafer growth method described in the present application, the method comprising:

[0040] Step 101, processing the sapphire substrate with the AlN thin film on the surface, specifically, treating the sapphire substrate with the AlN thin film on the surface at 1000° C. for 5 minutes under a hydrogen atmosphere with the reaction chamber pressure maintained at 100 mbar.

[0041] Step 102, growing the first graded AlGaN layer, the second graded AlGaN layer and the third AlGaN layer sequentially on the sapphire substrate:

[0042] The growing of the first graded AlGaN layer includes: controlling the reaction chamber pressure of 400 mbar, feeding NH with a flow rate of 60 L / min into the reaction chamber 3 , 90L / min of N 2 , 100 sccm of TMGa, 230 sccm of TMAl source, the growth temperature is gradually reduced from 550 °C to 500 °C by decreasing 0.1 °C per second during the growth process, and the first graded ...

Embodiment 2

[0057] This embodiment provides a LED epitaxial wafer growth method, the method comprising:

[0058] Step 201, processing the sapphire substrate with the AlN thin film on the surface, specifically, treating the sapphire substrate with the AlN thin film on the surface at 1200° C. for 10 minutes under a hydrogen atmosphere with the reaction chamber pressure maintained at 150 mbar.

[0059] Step 202, growing the first graded AlGaN layer, the second graded AlGaN layer and the third AlGaN layer sequentially on the sapphire substrate:

[0060] The growing of the first graded AlGaN layer includes: controlling the reaction chamber pressure of 600 mbar, feeding NH with a flow rate of 70 L / min into the reaction chamber 3 , 95L / min of N 2 , 110 sccm of TMGa, 250 sccm of TMAl source, the growth temperature is gradually reduced from 550 °C to 500 °C by decreasing 0.1 °C per second during the growth process, and the first graded AlGaN layer with a thickness D1 of 10 nm is grown on the sapp...

Embodiment 3

[0075] Step 301, processing the sapphire substrate with the AlN thin film on the surface, specifically, treating the sapphire substrate with the AlN thin film on the surface at 1100° C. for 7 minutes under a hydrogen atmosphere with the reaction chamber pressure maintained at 125 mbar.

[0076] Step 302, growing the first graded AlGaN layer, the second graded AlGaN layer and the third AlGaN layer sequentially on the sapphire substrate:

[0077] The growing of the first graded AlGaN layer includes: controlling the reaction chamber pressure of 500 mbar, feeding NH with a flow rate of 65 L / min into the reaction chamber 3 , 93L / min of N 2 , 105 sccm of TMGa, 240 sccm of TMAl source, the growth temperature is gradually reduced from 550 °C to 500 °C by decreasing 0.1 °C per second during the growth process, and the first graded AlGaN layer with a thickness D1 of 9 nm is grown on the sapphire substrate , wherein the molar composition of Al is 11%;

[0078] The growing of the second...

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Abstract

The present application discloses a LED epitaxial wafer growth method. The method comprises: processing a sapphire substrate having an AlN film on a surface thereof, and sequentially growing a first gradually varied AlGaN layer, a second gradually varied AlGaN layer, and a third gradually varied AlGaN layer on the sapphire substrate; growing a low-temperature buffer layer, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, periodicity growing an active layer MQW, growing a P-type AlGaN layer, growing a Mg-doped P-type GaN layer, and performing cooling. The first gradually varied AlGaN layer, the second gradually varied AlGaN layer, and the third gradually varied AlGaN layer are sequentially grown, the dislocation density is reduced, the epitaxial wafer warpage is reduced, and the pass rate of the GaN epitaxial wafer, the LED luminous efficiency and the antistatic capability are improved. The gradually varied AlGaN layers are subjected to annealing treatment so as to make the surface of the entire epitaxial layer flatter, with fewer hexagonal defects and concave pits on the surface, and the overall appearance is better.

Description

technical field [0001] The invention relates to the technical field of growing LED epitaxial wafers, in particular to a method for growing LED epitaxial wafers. Background technique [0002] The commonly used GaN growth method is patterning on a sapphire substrate. Sapphire crystal is one of the best substrate materials for the growth of GaN epitaxial layer, the third-generation semiconductor material, and its single crystal preparation process is mature. GaN is used as a base material for blue LEDs. Among them, SiC, the substrate material of the GaN epitaxial layer, has a small lattice mismatch with GaN, only 3.4%, but its thermal expansion coefficient is quite different from that of GaN, which is easy to cause GaN epitaxial layer fracture, and the manufacturing cost is high, which is 10% of that of sapphire. times; the cost of the substrate material Si is low, and the lattice mismatch degree with GaN is large, reaching 17%. It is difficult to grow GaN, and the luminous e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/12H01L33/32H01L33/16H01L33/00
CPCH01L33/0066H01L33/0075H01L33/12H01L33/16H01L33/32
Inventor 徐平吴奇峰
Owner XIANGNENG HUALEI OPTOELECTRONICS
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