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A method of LED epitaxial growth with reduced warpage

An epitaxial growth and warping technology, applied in the manufacture of semiconductor devices, electrical components, semiconductor/solid-state devices, etc., can solve the problems of large warpage and high fragmentation rate of epitaxial wafers, and achieve surface hexagonal defects and concave pits. Good appearance , the effect of reducing the fragmentation rate

Active Publication Date: 2022-02-01
XIANGNENG HUALEI OPTOELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention provides an LED epitaxial growth method with reduced warpage, which solves the technical problems of large warpage and high fragmentation rate of LED epitaxial wafers in the prior art, and makes the surface appearance of the epitaxial wafers better

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  • A method of LED epitaxial growth with reduced warpage
  • A method of LED epitaxial growth with reduced warpage
  • A method of LED epitaxial growth with reduced warpage

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Embodiment 1

[0042] The epitaxial layer structure is as figure 1 shown. The present invention uses MOCVD (metal organic compound chemical vapor deposition) to grow LED epitaxial wafers, using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic sources trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the source of aluminum, and the P-type dopant as magnesocene (CP 2 Mg), the substrate is a sapphire substrate, the reaction pressure is between 70mbar and 900mbar, and the specific growth method is as follows:

[0043] A method for reducing warpage of LED epitaxial growth, characterized in that it includes: processing sapphire substrate 1, growing Al z Ga 1-z N layer 2, growing AlN layer 3, growing MgAl y Ga 1-y N layer 4, g...

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Abstract

The invention discloses an LED epitaxial growth method for reducing warpage, comprising: processing a sapphire substrate, growing Al z Ga 1‑z N layer, growing AlN layer, growing MgAl y Ga 1‑y N layer, growth of N-type GaN layer doped with Si, growth of In x Ga （1‑x） N / GaN light-emitting layer, where x=0.20‑0.25, growing a P-type AlGaN layer, growing a P-type GaN layer doped with magnesium, and cooling down. The invention solves the technical problems of large warpage and high fragmentation rate of the LED epitaxial wafers in the prior art, and makes the surface appearance of the epitaxial wafers better.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial design application, in particular, to an LED growth method for reducing warping of epitaxial wafers. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting. Due to the advantages of small size, low power consumption, long service life, high brightness, environmental protection, and durability, LEDs are recognized by consumers, and the scale of domestic production of LEDs is also increasing. Gradually expand. [0003] Sapphire is the most common substrate material for industrial growth of GaN-based LEDs at this stage. In the current traditional epitaxial growth technology, the warpage of the epitaxial wafer is large, especially when the epitaxial crystal is grown on a large-sized sapphire substrate, the warpage is even greater, resulting in a high rate of grinding fragments in the subsequent chip manufacturing process and a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/12H01L21/67
CPCH01L33/007H01L33/12H01L21/67248H01L21/67253
Inventor 徐平
Owner XIANGNENG HUALEI OPTOELECTRONICS
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