Semiconductor detector and semiconductor detector manufacturing method

Abstract

The invention provides a semiconductor detector and a preparation method of the semiconductor detector, and relates to the technical field of detectors. The semiconductor detector comprises a semiconductor crystal, a cathode and an anode; the semiconductor crystal comprises a first face and a second face which are oppositely arranged on the two sides of the semiconductor crystal; the cathode is arranged on the first face of the semiconductor crystal; the anode is arranged on the second face of the semiconductor crystal; and the anode comprises collecting electrodes and weight gate electrodes,and the weight gate electrodes are arranged around the collecting electrodes, wherein the collecting electrodes and / or the weight gate electrodes are three-dimensional composite structure electrodes.By using the semiconductor detector, the collecting efficiency of current carriers inside the semiconductor crystal can be improved significantly.

Description

technical field [0001] The present application relates to the technical field of detectors, in particular, to a semiconductor detector and a method for preparing the semiconductor detector. Background technique [0002] Semiconductor detectors are radiation detectors that use semiconductor materials as the detection medium. The basic principle is that charged particles generate electron-hole pairs in the sensitive volume of the semiconductor detector, and the electron-hole pairs drift under the action of an external electric field to output signals. [0003] In the prior art, most semiconductor detectors adopt a detector structure with unipolar carrier collection characteristics, that is, the detector response signal is mainly the induction signal caused by electron carrier migration, which can well improve the performance of semiconductor crystal materials. Problems such as low energy resolution caused by low hole mobility. Among them, the pixel array semiconductor radiat...

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Problems solved by technology

[0004] However, the design of the pixel array unit electrodes of the existing pixel array semiconductor radiation detectors is very single, limited to the preparation of pixel unit electrodes with different shapes and planar structures on the surface of the anode, so that the electric field distribution inside the detector is not easily affected and controlled. The specially shaped planar pixel array electrode will only cause the change of the electric field in the crystal in the area close to the pixel array electrode, which has a very limited influence on the electric field distribution in the detector, thus affecting the carrier collection ability of the detector

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