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Ultrasonic scanning system and method for ultrasonically scanning a wafer

A scanning system, ultrasonic technology, applied in the direction of semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., can solve the problems of reducing detection accuracy, scanning image distortion, unrealistic, etc., and achieve the effect of improving detection accuracy

Active Publication Date: 2021-02-09
淮安西德工业设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Otherwise, it may cause distortion of the scanned image, thereby reducing the accuracy of detection
However, the actual distance of the ultrasound source from the wafer may vary during scanning across the wafer, since the wafer to be scanned may not be lying flat
In this case, it will be difficult to ensure that the focus of the emitted ultrasonic waves is always in the bonding interface
It is impractical to manually refocus at each scan position in order to adjust the focus of the ultrasound back into the bonding interface

Method used

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  • Ultrasonic scanning system and method for ultrasonically scanning a wafer
  • Ultrasonic scanning system and method for ultrasonically scanning a wafer
  • Ultrasonic scanning system and method for ultrasonically scanning a wafer

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0095] Example 1. An ultrasonic scanning system, including:

[0096] a carrier stage configured to carry a wafer to be scanned;

[0097] an ultrasonic probe configured to transmit scanning ultrasonic waves to the wafer to perform scanning and positioned at a reference distance from the wafer;

[0098]a rangefinder configured to measure a relative distance between the ultrasonic probe and the wafer; and

[0099] a controller that receives the relative distance from the rangefinder;

[0100] Wherein, the controller is configured to adjust the distance between the ultrasonic probe and the wafer based on the difference between the reference distance and the relative distance, so that the focus of the scanning ultrasonic wave is located at the center of the wafer. in the bonding interface.

example 2

[0101] Example 2. The ultrasonic scanning system of example 1, wherein:

[0102] The reference distance is determined based on voids in the bonding interface at the edge of the wafer using the rangefinder and the ultrasonic probe.

example 3

[0103] Example 3. The ultrasonic scanning system of example 1, wherein:

[0104] The reference distance is determined based on a predetermined thickness of the wafer and a predetermined focal length of the scanning ultrasound.

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Abstract

The present disclosure relates to an ultrasonic scanning system and a method for ultrasonic scanning of a wafer. The system includes: a carrier stage configured to carry a wafer to be scanned; an ultrasonic probe configured to transmit scanning ultrasonic waves to the wafer to perform scanning and positioned at a reference distance from the wafer place; the range finder, the range finder is configured to measure the relative distance between the ultrasonic probe and the wafer; and the controller, the controller receives the relative distance from the range finder; wherein, the controller is configured to compare the relative distance based on the reference distance The distance between the ultrasonic probe and the wafer is adjusted according to the distance difference, so that the focus of the scanning ultrasonic wave is located in the bonding interface of the wafer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to an ultrasonic scanning system and method for detecting defects in bonded wafers. Background technique [0002] In the manufacturing process of backside illumination sensor (Backside Illumination, BSI) products, a bonding (bonding) process may be used to combine two wafers into a bonded wafer. There may be defect structures such as voids in the bonding interface between the two bonded wafers, and such defect structures will directly affect the yield of BSI products. Therefore, inspection of the wafer is required to find defect structures in the bonding interface. [0003] Ultrasonic scanning techniques may be used to scan the bonded wafers to detect defect structures (eg, voids) in the bonding interface. Such detection can be achieved, for example, by transmitting scanning ultrasonic waves to the bonded wafers and checking the echoes of the ultrasonic waves reflected ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/66
CPCH01L21/67H01L21/67259H01L21/67288H01L22/12
Inventor 孙必胜刘命江
Owner 淮安西德工业设计有限公司