Flash memory structure and control method thereof

Abstract

The invention relates to a flash memory structure. The structure includes a nano wire formed on a substrate, a first fence structure and a second fence structure; in an extension direction of the nanowire, the nano wire is provided with a channel region, and a source end and a drain end respectively located on the two ends of the channel region; the source end and the drain end are respectively connected to a source region and a drain region in the substrate; and in the extension direction vertical the nano wire, the first fence structure and the second fence structure are in mutual isolationand arranged on the two sides of the channel region in an enclosed manner. Compared with flash memory devices in a 2-bit and single-bit storage manner, the flash memory devices using the structure can achieve enhancement in terms of storage capacity. In the structure, the channel region is designed on the nano wire on the substrate, so that both first fence structure and / or the second fence structure have good electrostatic control capability on the channel region, and therefore, the problems of short channel effect and gate leakage met when the sizes of the devices are shrunk can be solved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a flash memory structure and a control method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits. Among them, memory devices are an important type in digital circuits. Among storage devices, the development of flash memory (Flash Memory) is particularly rapid in recent years. The main feature of flash memory is that it can keep stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc., so it has been widely used in many fields such as microcomputer and automatic control. a wide range of applications. [0003] In the existing flash memory, the structure of 1-bit storage method (Single-Bit) or double-bit storage method (2-Bit) i...

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Problems solved by technology

[0003] In the existing flash memory, the structure of 1-bit storage method (Single-Bit) or double-bit storage method (2-Bit) is usually used for storage, but the storage capacity of the design of two storage bits is relatively small, which cannot meet the requirements of the current market. Mass Storage Requirements

And under the guidance of Moore's Law, the size of flash memory devices is getting smaller and smaller, but it cannot be reduced infinitely, because when it is reduced to a certain extent to make it reach its physical limit, serious short-channel effects and gate leakage currents will appear

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